IP Library › Granted Patent US 6,645,806
Granted Patent Utility
US 6,645,806 · App. 09/941,375

Methods of forming DRAMS, methods of forming access transistors for DRAM devices, and methods of forming transistor source/drain regions

Inventor: Martin C. Roberts
Patented Case View Patent ↗
Granted: Nov 11, 2003 Filed: Aug 28, 2001
Inventor
Martin C. Roberts
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,645,806
App. No.
09/941,375
Filed
2001-08-28
Granted
2003-11-11
Kind
B2