IP Library › Granted Patent US 6,660,585
Granted Patent Utility
US 6,660,585 · App. 09/531,787

Stacked gate flash memory cell with reduced disturb conditions

Inventors: Peter Wung Lee, Hsing-Ya Tsao, Vei-Han Chan, Hung-Sheng Chen, Fu-Chang Hsu
Patented Case View Patent ↗
Granted: Dec 9, 2003 Filed: Mar 21, 2000
Inventors
Peter Wung Lee
Hsing-Ya Tsao
Vei-Han Chan
Hung-Sheng Chen
Fu-Chang Hsu
Assignee (at issue)
APLUS FLASH TECHNOLOGY, INC.

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Quick Facts
Patent No.
US 6,660,585
App. No.
09/531,787
Filed
2000-03-21
Granted
2003-12-09
Kind
B1