Granted Patent
Utility
US 6,670,216 · App. 10/283,829
Method for manufacturing a power semiconductor device and direct bonded substrate thereof
Inventor:
Gerhard Karl Strauch
Patented Case
View Patent ↗
Granted: Dec 30, 2003
Filed: Oct 29, 2002
Inventor
Gerhard Karl Strauch
Assignee (at issue)
IXYS, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.