IP Library Granted Patent US 6,670,221
Granted Patent Utility
US 6,670,221 · App. 10/262,890

Semiconductor device having a built-in contact-type sensor and manufacturing method thereof

Inventors: Hideharu Sakoda, Fumihiko Taniguchi
Patented Case View Patent ↗
Granted: Dec 30, 2003 Filed: Oct 3, 2002
Inventors
Hideharu Sakoda
Fumihiko Taniguchi
Assignee (at issue)
Fujitsu Limited

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Quick Facts
Patent No.
US 6,670,221
App. No.
10/262,890
Filed
2002-10-03
Granted
2003-12-30
Kind
B2