Granted Patent
Utility
US 6,680,509 · App. 10/158,044
Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory
Inventors:
Yider Wu, Jean Y. Yang, Mark T. Ramsbey, Emmanuel H. Lingunis, Yu Sun
Patented Case
View Patent ↗
Granted: Jan 20, 2004
Filed: May 30, 2002
Inventors
Yider Wu
Jean Y. Yang
Mark T. Ramsbey
Emmanuel H. Lingunis
Yu Sun
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.