Granted Patent
Utility
US 6,710,383 · App. 10/005,355
MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions
Inventors:
Jiro Yugami, Natsuki Yokoyama, Toshiyuki Mine, Yasushi Goto
Patented Case
View Patent ↗
Granted: Mar 23, 2004
Filed: Dec 7, 2001
Inventors
Jiro Yugami
Natsuki Yokoyama
Toshiyuki Mine
Yasushi Goto
Assignee (at issue)
Renesas Technology Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.