Granted Patent
Utility
US 6,753,566 · App. 10/441,118
Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride
Inventors:
Toshie Kutsunai, Shinichiro Hayashi, Takumi Mikawa, Yuji Judai
Patented Case
View Patent ↗
Granted: Jun 22, 2004
Filed: May 20, 2003
Inventors
Toshie Kutsunai
Shinichiro Hayashi
Takumi Mikawa
Yuji Judai
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.