Granted Patent
Utility
US 6,770,529 · App. 10/611,502
EDMOS device having a lattice type drift region and method of manufacturing the same
Inventors:
Dae Woo Lee, Tae Moon Roh, II Yong Park, Yil Suk Yang, Jong Dae Kim
Patented Case
View Patent ↗
Granted: Aug 3, 2004
Filed: Jun 30, 2003
Inventors
Dae Woo Lee
Tae Moon Roh
II Yong Park
Yil Suk Yang
Jong Dae Kim
Assignee (at issue)
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.