Granted Patent
Utility
US 6,780,239 · App. 09/981,848
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
Inventors:
Seiji Sarayama, Masahiko Shimada, Hisanori Yamane, Masato Aoki
Patented Case
View Patent ↗
Granted: Aug 24, 2004
Filed: Oct 16, 2001
Inventors
Seiji Sarayama
Masahiko Shimada
Hisanori Yamane
Masato Aoki
Assignee (at issue)
RICOH COMPANY, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.