Granted Patent
Utility
US 6,781,194 · App. 09/833,132
Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
Inventor:
Bantval J. Baliga
Patented Case
View Patent ↗
Granted: Aug 24, 2004
Filed: Apr 11, 2001
Inventor
Bantval J. Baliga
Assignee (at issue)
Silicon Semiconductor Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.