Granted Patent
Utility
US 6,787,817 · App. 10/318,244
Compound semiconductor having a doped layer between the gate and an ohmic contact of an active region
Inventors:
Hiroyuki Takazawa, Shinichiro Takatani, Masao Yamane, Masayoshi Kobayashi
Patented Case
View Patent ↗
Granted: Sep 7, 2004
Filed: Dec 13, 2002
Inventors
Hiroyuki Takazawa
Shinichiro Takatani
Masao Yamane
Masayoshi Kobayashi
Assignee (at issue)
Renesas Technology Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.