IP Library › Granted Patent US 6,791,131
Granted Patent Utility
US 6,791,131 · App. 09/489,954

Method for forming a storage cell capacitor compatible with high dielectric constant materials

Inventors: Pierre C. Fazan, Viju K. Mathews
Patented Case View Patent ↗
Granted: Sep 14, 2004 Filed: Jan 24, 2000
Inventors
Pierre C. Fazan
Viju K. Mathews
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,791,131
App. No.
09/489,954
Filed
2000-01-24
Granted
2004-09-14
Kind
B1