Granted Patent
Utility
US 6,797,598 · App. 10/226,101
Method for forming an epitaxial cobalt silicide layer on MOS devices
Inventors:
Chong Wee Lim, Chan Soo Shin, Daniel Leo Gall, Ivan Petrov, Joseph Greene
Patented Case
View Patent ↗
Granted: Sep 28, 2004
Filed: Aug 22, 2002
Inventors
Chong Wee Lim
Chan Soo Shin
Daniel Leo Gall
Ivan Petrov
Joseph Greene
Assignee (at issue)
The Board of Trustees of the University of Illinois
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.