Granted Patent
Utility
US 6,800,830 · App. 09/931,595
Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
Inventor:
Imad Mahawili
Patented Case
View Patent ↗
Granted: Oct 5, 2004
Filed: Aug 16, 2001
Inventor
Imad Mahawili
Assignee (at issue)
Hitachi Kokusai Electric Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.