Granted Patent
Utility
US 6,825,118 · App. 10/438,980
Method of manufacturing semiconductor device having trench element-isolating structure
Inventors:
Takahiro Maruyama, Ryoichi Yoshifuku
Patented Case
View Patent ↗
Granted: Nov 30, 2004
Filed: May 16, 2003
Inventors
Takahiro Maruyama
Ryoichi Yoshifuku
Assignee (at issue)
Renesas Technology Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.