Granted Patent
Utility
US 6,828,180 · App. 10/260,067
Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction
Inventors:
Daniel Toet, Thomas W. Sigmon
Patented Case
View Patent ↗
Granted: Dec 7, 2004
Filed: Sep 27, 2002
Inventors
Daniel Toet
Thomas W. Sigmon
Assignee (at issue)
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.