Granted Patent
Utility
US 6,831,292 · App. 10/251,424
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
Inventors:
Matthew T. Currie, Anthony J. Lochtefeld, Richard Hammond, Eugene A. Fitzgerald
Patented Case
View Patent ↗
Granted: Dec 14, 2004
Filed: Sep 20, 2002
Inventors
Matthew T. Currie
Anthony J. Lochtefeld
Richard Hammond
Eugene A. Fitzgerald
Assignee (at issue)
AMBERWAVE SYSTEMS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.