Beam processing apparatus
A beam processing apparatus comprises a workpiece holder ( 20 ) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber ( 3 ), first electrode ( 4 ) disposed in the vacuum chamber ( 3 ), and a second electrode ( 5 ) disposed upstream of the first electrode ( 4 ) in the vacuum chamber ( 3 ). The beam processing apparatus further comprises a voltage applying unit for applying a variable voltage between the first electrode ( 4 ) and the second electrode ( 5 ) to alternately extract positive ions ( 6 ) and negative ions from the plasma generated by the plasma generator.
1. A beam processing apparatus comprising:
a workpiece holder for holding a workpiece;
a plasma generator for generating a plasma in a vacuum chamber, said plasma generator alternately performing application of a high-frequency voltage for generating positive ions and electrons and interruption of said high-frequency voltage for generating negative ions repeatedly;
a first electrode disposed in said vacuum chamber;
a second electrode disposed upstream of said first electrode in said vacuum chamber; and
a voltage applying unit for applying a variable voltage between said first electrode and said second electrode to alternately extract positive ions and negative ions from the plasma generated by said plasma generator.
2. A beam processing apparatus comprising;
a workpiece holder for holding a workpiece;
a plasma generator for generating a plasma in a vacuum chamber:
a negative ion generating chamber disposed downstream of said plasma generator for attaching electrons to a residual gas to generate negative ions therein;
a first electrode disposed in said vacuum chamber;
a second electrode disposed upstream of said first electrode in said vacuum chamber; and
a voltage applying unit for applying a variable voltage between said first electrode and said second electrode to alternately extract positive ions and negative ions from the plasma generated by said plasma generator.
3. A beam processing apparatus according to claim 2 , wherein said negative ion generating chamber has an electron cloud generator for generating an electron cloud within said negative ion generating chamber.
4. A beam processing apparatus according to claim 1 , further comprising a neutralization device for alternately neutralizing said positive ions and said negative ions extracted by said voltage applying unit.
5. A beam processing apparatus according to claim 4 , wherein said neutralization device has an orifice electrode as said first electrode and a grid electrode as said second electrode; and
said voltage applying unit applies a variable voltage between said orifice electrode and said grid electrode to alternately extract positive ions and negative ions from said plasma and to alternately pass said positive ions and said negative ions through orifices defined in said orifice electrode.
6. A beam processing apparatus comprising:
a first electrode disposed in a vacuum chamber;
a workpiece holder disposed downstream of said first electrode for holding a workpiece;
a second electrode disposed upstream of said first electrode in said vacuum chamber; and
a voltage applying unit for applying a variable voltage between said first electrode and said second electrode to generate a plasma between said first electrode and said second electrode and to alternately extract positive ions and negative ions from the generated plasma.
7. A beam processing apparatus according to claim 6 , further comprising a neutralization device for alternately neutralizing said positive ions and said negative ions extracted by said voltage applying unit.
8. A beam processing apparatus according to claim 7 , wherein said neutralization device has an orifice electrode as said first electrode and a grid electrode as said second electrode; and
said voltage applying unit applies a variable voltage between said orifice electrode and said grid electrode to alternately extract positive ions and negative ions from said plasma and to alternately pass said positive ions and said negative ions through orifices defined in said orifice electrode.
9. A beam processing apparatus according to claim 2 , further comprising a neutralization device for alternately neutralizing said positive ions and said negative ions extracted by said voltage applying unit.
10. A beam processing apparatus according to claim 9 , wherein said neutralization device has an orifice electrode as said first electrode and a grid electrode as said second electrode; and
said voltage applying unit applies a variable voltage between said orifice electrode and said grid electrode to alternately extract positive ions and negative ions from said plasma and to alternately pass said positive ions and said negative ions through orifices defined in said orifice electrode.