Semiconductor module and method for fabricating the semiconductor module
A semiconductor module and a method for its fabrication are described. The semiconductor module has at least one semiconductor component that is disposed directly on a substrate body. The substrate body has an insulating ceramic provided with a metal layer. At least one connection conductor is joined to the metal layer by welding, in particular laser microwelding.
1. A semiconductor module, comprising:
a substrate body having an insulating ceramic layer with a top side, and a metal layer fixedly joined to said top side of said insulating ceramic layer, said substrate body being one of a direct copper bonded (DCB) substrate and an active metallic brazed (AMB) substrate;
at least one connection conductor laser-welded to said metal layer, said connection conductor having a foot being bent at right angles, said foot having at least one slot formed therein; and
at least one semiconductor component disposed directly on said substrate body facing said metal layer.
2. The semiconductor module according to claim 1 , wherein said insulating ceramic layer of said substrate body is formed of Al 2 O 3 .
3. The semiconductor module according to claim 1 , wherein said metal layer is formed of at least one material selected from the group consisting of copper and aluminium.
4. The semiconductor module according to claim 1 , wherein said insulating ceramic layer contains AlN.
5. The semiconductor module according to claim 1 , wherein said insulating ceramic layer contains BeO.
6. The semiconductor module according to claim 1 , wherein said connection conductor is one of a plurality of connection conductors each formed of a at least one material selected from the group consisting of Cu, Al, CuSn and CnZn.
7. The semiconductor module according to claim 1 , including a coating disposed on said metal layer.
8. The semiconductor module according to claim 1 , wherein said slot has a given width that is approximately equal to a thickness of said foot.