Dual port static memory cell and semiconductor memory device having the same
The present invention includes a dual port static memory cell and a semiconductor memory device having the same, the dual port static memory cell comprising a first transmission gate having a gate connected to a word line and connected between a bit line and a first node, a second transmission gate having a gate connected to the word line and connected between a complementary bit line and a second node, a latch connected between the first node and the second node, and a PMOS transistor having a gate connected to a scan control line and connected between the second node and a scan bit line.
1. A dual port static memory cell comprising:
a first transmission gate having a gate connected to a word line and connected between a bit line and a first node;
a second transmission gate having a gate connected to the word line and connected between a complementary bit line and a second node;
a latch connected between the first node and the second node; and
a PMOS transistor having a gate connected to a scan control line and connected between the second node and a scan bit line.
2. The dual port static memory cell according to claim 1 , wherein the first and second transmission gates are implemented by NMOS transistors.
3. The dual port static memory cell according to claim 1 , wherein the latch comprises a first CMOS inverter for inverting a signal from the first node and outputting the inverted signal of the first node to the second node, and a second CMOS inverter for inverting a signal from the second node and transmitting the inverted signal of the second node to the first node.
4. A semiconductor memory device comprising:
a plurality of memory cells connected between corresponding pairs of bit lines and corresponding word lines, while being arranged in a matrix;
a plurality of scan transistors connected to corresponding scan bit lines, the corresponding memory cells and corresponding scan control lines, while being arranged in a matrix;
a pre-charge means for pre-charging the plurality of bit line pairs; and
a pre-discharge means for pre-discharging the scan bit lines,
wherein each scan transistor includes a PMOS transistor connected between a corresponding memory cell of the memory cells and a corresponding scan control line of the scan control lines, the PMOS transistor having a gate connected to a corresponding scan control line of the scan control lines.
5. The semiconductor memory device according to claim 4 , wherein the each memory cell comprises:
a first NMOS transistor connected between a bit line of at least one of the bit line pairs and the first node, and having a gate connected to the word line;
a second NMOS transistor connected between a complementary bit line of the bit line pair and the second node, and having a gate connected to the word line; and
a latch connected between the first node and the second node.
6. The semiconductor memroy device according to claim 5 , wherein the latch comprises:
a first CMOS inverter for inverting a signal from the first node and transmitting the inverted signal to the second node; and
a second CMOS inverter for inverting a signal from the second node and transmitting the inverted signal to the first node.