Focal plane arrays in type II-superlattices
The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.
1. An infrared detector device comprising: a type-II superlattice structure on a Gasb substrate,
a detector pixel,
an indium bump contacting said detector pixel on one side,
and contacting a ROIC unit cell on an opposite side;
the ROIC unit being bonded to the substrate
underfill between the substrate and the detector substrate to form a FPA hybrid, the FPA hybrid being connected to a ceramic chip carrier.
2. The infrared detector device of claim 1 the type-II superlattice structure comprises a system selected from the groups consisting of InAs/GaSb; SiGe; InAs/Ga x In 1-x Sb; and InAs/GaSb/AlSb.
3. The infrared detector device of claim 1 the detector pixel is at least partially passivated.
4. The infrared detector device of claim 3 wherein the detector pixel is at least partially passivated with SiO 2 or Si 3 N 4.
5. The infrared detector device of claim 1 wherein the type-II superlattice is a binary system.
6. The infrared detector device of claim 1 wherein the substrate is thinner.
7. The infrared detector device of claim 1 wherein the substrate is 40 mm.