Line structure in electroluminescence display device
A wide line portion is drawn from a cathode while another wide line portion is formed by gathered lines extending from cathode terminals. A contact of realtively large size is formed in a region where the two wide line portions overlap each other with an insulating film being interposed therebetween, so as to connect both wide line portions. Further, in this contact, the cathode terminals and the cathode are connected through an intermediate layer composed of a conductive oxide material. Thus, a reduction in the voltage to be applied to the cathode as a result of increased line resistance between the terminals and the cathode can be prevented, thereby preventing deterioration of display quality.
1. An electroluminescence display device comprising, on an insulating substrate, a display region including a plurality of pixels and a group of terminals disposed on an end portion of said substrate for externally connecting the device, wherein
each of said plurality of pixels comprises an electroluminescence element, a storage capacitor, a thin film transistor for switching, and a thin film transistor for driving an element;
said thin film transistor for switching is connected to a gate line and to a data line;
said thin film transistor for switching is connected to a first electrode of said storage capacitor and to a gate of said thin film transistor for driving the element so that a signal corresponding to a data signal supplied from said data line is applied through said thin film transistor for switching to said first electrode of said storage capacitor and to said gate of said thin film transistor for driving the element;
said thin film transistor for switching and said thin film transistor for driving the element each has a single gate structure;
said electroluminescence element comprises a first electrode and a second electrode and is formed in an upper layer of said thin film transistor for switching and said thin film transistor for driving the element, one of said first electrode and said second electrode being selectively connected to a power source through an active layer of said thin film transistor for driving the element so as to receive an electric current from said power source, said electric current corresponding to a signal applied to a gate of said thin film transistor for driving the element;
said second electrode which is formed in an upper layer of said first electrode is connected to a line at a contact portion, said line extending from said group of terminals and composed of the same material as said data line which is connected to a source electrode or to a drain electrode of said thin film transistor for switching; and
a contact intermediate layer is provided in said contact portion between said second electrode and of said line, said contact intermediate layer composed of a conductive oxide constituting said first electrode.
2. An electroluminescence display device according to claim 1 ,
wherein said thin film transistor for driving the element is a P-channel type thin film transistor.
3. An electroluminescence display device according to claim 1 , wherein said thin film transistor for switching and said thin film transistor for driving the element each is a bottom gate type thin film transistor wherein an active layer composed of poly-silicon is formed above a gate electrode with a gate insulating layer interposed therebetween.
4. An electroluminescence display device comprising, on an insulating substrate, a display region including a plurality of pixels and a group of terminals disposed on an end portion of said substrate for externally connecting the device, wherein
each of said plurality of pixels comprises an electroluminescence element, a storage capacitor, a thin film transistor for switching, and a thin film transistor for driving an element;
said thin film transistor for switching is connected to a gate line and to a data line;
said thin film transistor for switching is connected to a first electrode of said storage capacitor and to a gate of said thin film transistor for driving the element so that a signal corresponding to a data signal supplied from said data line is applied through said thin film transistor for switching to said first electrode of said storage capacitor and to said gate of said thin film transistor for driving the element;
said thin film transistor for driving the element is a p-channel type thin film transistor having a single gate structure;
said electroluminescence element comprises a first electrode and a second electrode and is formed above said thin film transistor for switching and said thin film transistor for driving the element, one of said first electrode and said second electrode being selectively connected to a power source through an active layer of said thin film transistor for driving the element so as to receive an electric current from said power source, said electric current corresponding to a signal applied to a gate of said thin film transistor for driving the element; and
said second electrode which is formed above said first electrode is electrically connected to a line layer extending from said group of terminals, and comprises a contact portion in which at least said second electrode and a layer composed of a conductive metal oxide identical to that of said first electrode are connected, on a connection path between said second electrode and said line layer.
5. An electroluminescence display device according to claim 4 , wherein said thin film transistor for switching has a single gate structure.