Lid assembly for a processing system to facilitate sequential deposition techniques

1. A lid assembly for a semiconductor processing system, the lid assembly comprising:

a lid having first and second opposed surfaces;

a plurality of controllable flow channels extending from the first and second opposed surfaces; and

a gas control system disposed on the first surface and operably opening and closing the channels, wherein the gas control system comprises:

a gas manifold disposed on the lid;

at least one valve coupled to the gas manifold and adapted to control a flow through one of the flow channels; and

a reservoir positioned on the lid and fluidly connected to the gas manifold.

2. The lid assembly of claim 1 , wherein the gas manifold comprises:

an upper surface and a lower surface;

a first channel, a second channel and a third channel each extending through the gas manifold and exiting the lower surface; and

a fourth channel extending from the upper surface and coupling to the third channel.

3. The lid assembly of claim 2 , wherein the gas manifold further comprises:

a conduit disposed therein adapted to flow a heat transfer fluid therethrough.

4. The lid assembly of claim 2 , wherein the gas control system further comprises: a remote plasma source fluidly coupled to the fourth channel.

5. A lid assembly for a semiconductor processing system, the lid assembly comprising:

a lid having first and second opposed surfaces, the first and second opposed surfaces having a first inlet channel, a second inlet channel and a third inlet channel disposed therethrough;

a gas manifold coupled to the first surface of the lid, the gas manifold comprising:

a body having an upper surface and lower surface;

a first channel, a second channel, and a third channel each extending through the gas manifold to the lower surface;

a valve coupled to the gas manifold; and

a gas reservoir positioned on the lid and fluidly connected to the gas manifold.

6. The lid assembly of claim 5 , wherein the gas manifold further comprises a fourth channel coupled between the upper surface and the third channel.

7. The lid assembly of claim 6 further comprising:

a remote plasma source fluidly coupled to the fourth channel.

8. The lid assembly of claim 5 further comprising:

a thermal conditioning channel disposed in the gas manifold fluidly coupling the valve and the gas reservoir.

9. A lid assembly for a semiconductor processing system, the lid assembly comprising:

a lid having first and second opposed surfaces, the first and second opposed surfaces having a plurality of inlet channels disposed therethrough;

a valve;

a gas manifold coupled to the first surface of the lid, the gas manifold comprising:

a body having an upper surface and lower surface;

a plurality of gas channels extending through the gas manifold to the lower surface; and

a thermal conditioning channel disposed in the gas manifold and fluidly coupled to at least one of the plurality of gas channels by the valve; and

a gas reservoir fluidly positioned on the lid, connected to the gas manifold, and fluidly coupled to the valve by the thermal conditioning channel.

10. The lid assembly of claim 9 , wherein the gas manifold further comprises a cleaning agent supply channel coupled between the upper surface and one of the plurality of channels.

11. The lid assembly of claim 10 further comprising:

a cleaning source fluidly coupled to the cleaning agent supply channel.

12. The lid assembly of claim 9 further comprising:

a baffle plate having a first side and a second side, the first side coupled to the second surface of the lid and having a recess formed therein, the recess defining a plenum with the second surface of the lid and fluidly communicating with the plurality of channels via the inlet channels disposed in the lid, the baffle plate having a center passage disposed therethrough providing a singular passageway between the plenum and the second side of the baffle plate.

13. The lid assembly of claim 12 , wherein the second surface of the lid further comprises a plurality of recesses formed therein that reduce the contact area with the first side of the baffle plate.

14. The lid assembly of claim 12 , wherein the first side of the baffle plate further comprises a plurality of bosses that maintain the first side of the baffle plate in a spaced-apart relation with the second surface of the lid.

15. The lid assembly of claim 14 , wherein at least one of the bosses has a mounting hole disposed therethrough.

16. The lid assembly of claim 12 , wherein the first side of the baffle plate further comprises a ring circumscribing the recess that maintains the first side of the baffle plate in a spaced-apart relation with the second surface of the lid.

17. The lid assembly of claim 12 , wherein the first side of the baffle plate further comprises a ring circumscribing the recess and a plurality of bosses disposed radially outward of the ring, the ring and bosses maintaining the first side of the baffle plate in a spaced-apart relation with the second surface of the lid.

18. The lid assembly of claim 17 , wherein the ring and bosses extend from the first side of the baffle plate to a common elevation.

19. A lid assembly for a semiconductor processing system, comprising:

a lid having a first surface opposed to a second surface;

at least one controllable flow channel extending from the first surface through the second surface; and

a gas control system disposed on the first surface and operably opening and closing the at least one controllable flow channel, wherein the gas control system comprises:

a gas manifold disposed on the lid;

at least one valve coupled to the gas manifold adapted to control a flow through the at least one controllable flow channel; and

at least one precursor reservoir fluidly connected between at least one precursor source and the gas manifold.

20. The lid assembly of claim 19 , wherein a remote plasma source is fluidly coupled to the at least one controllable flow channel.

21. A lid assembly for a semiconductor processing system, comprising:

a lid having a first surface opposed to a second surface; and

a gas control system disposed on the first surface and operably opening and closing at least one controllable flow channel, wherein the gas control system comprises:

a gas manifold disposed on the lid;

at least one valve coupled to the gas manifold and adapted to control a flow through the at least one controllable flow channel;

at least one precursor reservoir fluidly connected to the gas manifold; and

at least one precursor source fluidly connected to the at least one precursor reservoir.

22. The lid assembly of claim 21 , wherein the at least one controllable flow channel extends from the first surface through the second surface.

23. The lid assembly of claim 21 , wherein a remote plasma source is fluidly coupled to the at least one controllable flow channel.