Interference colored filters

1. A pattern structure of at least two different color filter elements disposed one beside the other upon a carrier substrate, said filter elements each comprising a layer of dielectric material, said layer of dielectric material residing at at least one of said filter elements upon a layer of material that is resistant to activated oxygen or activated water and having a second surface facing towards the said substrate, wherein said dielectric layers of said filter elements are laterally disposed side-by-side and form a disturbed region between adjacent said filter elements, said dielectric layers having a thickness of at most d 6 and wherein said disturbed region has a width of at most 10 * d 5 .

2. The structure of claim 1 , wherein said resistant material is silicon or silicon dioxide.

3. The structure of claim 1 , wherein said second surface of said layer of resistant material facing toward said substrate resides upon the surface of said substrate.

4. The structure of claim 1 , wherein said width is at most 2 * d 5 .

5. The structure of claim 1 , wherein said layer of resistant material has a thickness of between 5 and 10 nm.

6. The structure of claim 1 , wherein said at least one filter element has a spectral edge shift that is at most 1 nm over a temperature range of 20 to 80° C.

7. The structure of claim 1 , wherein said thickness is at most 10 μm.

8. The structure of claim 7 , wherein said thickness is at most 2 μm.

9. An LCD light valve arrangement with a pattern structure according to claim 1 .

10. An LCD light valve arrangement with a pattern structure according to claim 2 .

11. An LCD light valve arrangement with a pattern structure according to 3 .

12. An LCD light valve arrangement with a pattern structure according to claim 4 .

13. An LCD light valve arrangement with a pattern structure according to claim 5 .

14. An LCD light valve arrangement with a pattern structure according to claim 6 .

15. An LCD light valve arrangement with a pattern structure according to claim 7 .

16. An LCD light valve arrangement with a pattern structure according claim 8 .

17. A CCD sensor arrangement with a pattern structure according to claim 1 .

18. A CCD sensor arrangement with a pattern structure according to claim 2 .

19. A CCD sensor arrangement with a pattern structure according to claim 3 .

20. A CCD sensor arrangement with a pattern structure according to claim 4 .

21. A CCD sensor arrangement with a pattern structure according to claim 5 .

22. A CCD sensor arrangement with a pattern structure according to claim 6 .

23. A CCD sensor arrangement with a pattern structure according to claim 7 .

24. A CCD sensor arrangement with a pattern structure according to claim 8 .

25. A pattern structure of at least two different color filter elements disposed one beside the other upon a carrier substrate, said filter elements each comprising a layer of dielectric material, said layer of dielectric material residing at at least one of said filter elements upon a layer of material that is resistant to activated oxygen or activated water and having a second surface facing towards the said substrate, wherein said layer of resistant material has a thickness of between 5 and 10 nm.

26. The structure of claim 25 , wherein said resistant material is silicon or silicon dioxide.

27. The structure of claim 25 , wherein said second surface of said layer of resistant material facing toward said substrate resides upon the surface of said substrate.

28. The structure or claim 25 , wherein said dielectric layers of said filter elements are laterally disposed side-by-side and form a disturbed region between adjacent said filter elements, said dielectric layers having a thickness of at most d 5 and wherein said disturbed region has a width of at most 10 d 5 .

29. The structure of claim 28 , wherein said width is at most 2 * d 5 .

30. The structure of claim 28 , wherein said thickness is at most 10 μm.

31. The structure of claim 30 , wherein said thickness is at most 2 μm.

32. The structure of claim wherein said at least one filter element has a spectral edge shift that is at most 1 nm over a temperature range of 20 to 80° C.

33. An LCD light valve arrangement with a pattern structure according to claim 25 .

34. An LCD light valve arrangement with a pattern structure according to claim 26 .

35. An LCD light valve arrangement with a pattern structure according to claim 27 .

36. An LCD light valve arrangement with a pattern structure according to claim 28 .

37. An LCD light valve arrangement with a pattern structure according to claim 29 .

38. An LCD light valve arrangement with a pattern structure according to claim 30 .

39. An LCD light valve arrangement with a pattern structure according to claim 31 .

40. A CCD sensor arrangement with a pattern structure according to claim 25 .

41. A CCD sensor arrangement with a pattern structure according to claim 26 .

42. A CCD sensor arrangement with a pattern structure according to claim 27 .

43. A CCD sensor arrangement with a pattern structure according to claim 28 .

44. A CCD sensor arrangement with a pattern structure according to claim 29 .

45. A CCD sensor arrangement with a pattern structure according to claim 30 .

46. A CCD sensor arrangement with a pattern structure according to claim 31 .

47. A pattern structure of at least two different color filter elements disposed one beside the other upon a carrier substrate, said filter elements each comprising a layer of dielectric material, said layer of dielectric material residing at at least one of said filter elements upon a layer of material that is resistant to activated oxygen or activated water and having a second surface facing towards the said substrate, wherein said at least one filter element has a spectral edge shift that is at most 1 nm over a temperature range of 20 to 80° C.

48. The structure of claim 47 , wherein said resistant material is silicon or silicon dioxide.

49. The structure of claim 47 , wherein said second surface of said layer of resistant material facing toward said substrate resides upon the surface of said substrate.

50. The structure or claim 47 , wherein said dielectric layers of said filter elements are laterally disposed side-by-side and form a disturbed region between adjacent said filter elements, said dielectric layers having a thickness of at most d 5 and wherein said disturbed region has a width of at most 10 * d 5 .

51. The structure of claim 50 , wherein said width is at most 2 * d 5 .

52. The structure of claim 50 , wherein said thickness is at most 10 μm.

53. The structure of claim 52 , wherein said thickness is at most 2 μm.

54. The structure of claim 47 , wherein said layer of resistant material has a thickness of between 5 and 10 nm.

55. An LCD light valve arrangement with a pattern structure according to claim 47 .

56. An LCD light valve arrangement with a pattern structure according to claim 48 .

57. An LCD light valve arrangement with a pattern structure according to claim 49 .

58. An LCD light valve arrangement with a pattern structure according to claim 50 .

59. An LCD light valve arrangement with a pattern structure according to claim 51 .

60. An LCD light valve arrangement with a pattern structure according to claim 52 .

61. An LCD light valve arrangement with a pattern structure according to claim 53 .

62. A CCD sensor arrangement with a pattern structure according to claim 47 .

63. A CCD sensor arrangement with a pattern structure according to claim 48 .

64. A CCD sensor arrangement with a pattern structure according to claim 49 .

65. A CCD sensor arrangement with a pattern structure according to claim 50 .

66. A CCD sensor arrangement with a pattern structure according to claim 51 .

67. A CCD sensor arrangement with a pattern structure according to claim 52 .

68. A CCD sensor arrangement with a pattern structure according to claim 53 .