Thin-film resistor with high temperature coefficient for use as passive semiconductor component for integrated circuits, and method for producing the same
The invention relates to a semiconductor component with a WSiN layer as thin-film resistor with high temperature coefficient for use as thermistor in bolometers. The production method comprises thermal decoupling by means of thermistors that are free-standing or disposed on an insulation layer.
1. A layer sequence for a thin film resistor with high thermal coefficient on a substrate, comprising:
a first passivating layer ( 2 ),
a WSiN-layer ( 3 ), and
a first metal layer ( 4 ),
wherein the the chemical composition of the WSiN-layer is W x Si Y N Z with x, y as main components and with the proportion of z limited to a sufficiently low level that the temperature coefficient of resistance is greater than 1%/° C. and 1/f-noise is low, and wherein said resistor exhibits absorption in the infrared radiation range.
2. A layer sequence according to claim 1 , wherein between the first passivating layer ( 2 ) and the WSiN-layer ( 3 ) an intermediate layer sequence ( 13 , 14 , 15 ) is provided for thermal insulation.
3. A layer sequence according to claim 2 , wherein the intermediate layer sequence includes a BCB-layer ( 15 ).
4. A passive semiconductor component, comprising:
a substrate ( 1 ),
a first passivating layer ( 2 ),
a WSiN-residue layer ( 3 ′),
a first connection metallization ( 4 ′),
a second passivating layer ( 7 ) with openings for electrical connection at both ends of the resistor layer,
metal contacts ( 8 ) at the sites of the openings provided in the second passivating layer, and
a further electromagnetic radiation transmissive opening provided between the metal contacts ( 8 ), for radiation of the WSiN-residue layer ( 3 ′),
wherein the the chemical composition of the WSiN-layer is W X Si Y N Z with x, y as main components and with the proportion of z limited to a sufficiently low level that the temperature coefficient of resistance is greater than 1%/° C. and 1/f-noise is low, and wherein said resistor exhibits absorption in the infrared radiation range.
5. A passive semiconductor component, comprising:
a substrate ( 1 ),
a first passivating layer ( 2 ),
a WSiN-residue layer ( 3 ′),
an intermediate layer sequence ( 13 , 14 , 15 ) for thermal insulation,
a first connection metallization ( 4 ′),
a second passivating layer ( 7 ) with openings for electrical connection at both ends of the WSiN-residue layer ( 3 ′),
metal contacts ( 8 ) at the sites of the openings provided between the two passivating layers, and
a further electromagnetic radiation transmissive opening provided between the metal contacts ( 8 ) for radiation of the WSiN-residue layer ( 3 ′),
wherein the the chemical composition of the WSiN-layer is W X Si Y N Z with x, y as main components and with the proportion of z limited to a sufficiently low level that the temperature coefficient of resistance is greater than 1%/° C. and 1/f-noise is low, and wherein said resistor exhibits absorption in the infrared radiation range.
6. A passive semiconductor component according to claim 5 , wherein the intermediate layer sequence ( 13 , 14 , 15 ) for thermal insulation is provided locally in the area affected by radiation.
7. A passive semiconductor component comprising:
a substrate ( 1 ),
a first passivating layer ( 2 ),
a WSiN-residue layer ( 3 ′),
an intermediate layer sequence ( 13 , 14 , 15 ) for thermal insulation,
a first connection metallization ( 4 ′),
a second passivating layer ( 7 ) with openings for electrical connection at both ends of the WSiN-residue layer ( 3 ′),
metal contacts ( 8 ) at the sites of the openings provided between the two passivating layers, and
a further electromagnetic radiation transmissive opening provided between the metal contacts ( 8 ) for radiation of the WSiN-residue layer ( 3 ′),
wherein the intermediate layer sequence ( 13 , 14 , 15 ) for thermal insulation is provided locally in the area affected by radiation, and
wherein the intermediate layer sequence ( 13 , 14 , 15 ) for thermal insulation includes a polyimide layer ( 15 ), which is removed by means of an oxide plasma, whereby at this area a thermal insulating void ( 20 ) results.
8. A passive semiconductor component according to claim 4 , wherein the substrate ( 1 ) is comprised of silicon or glass.
9. A passive semiconductor component according to claim 1 , wherein the first passivating layer ( 2 ) is an oxide layer with a thickness of approximately 2 μm.
10. A passive semiconductor component according to claim 1 , wherein the opening transmissive for electromagnetic radiation, for radiation of the WSiN-residue layer ( 3 ′), is covered over with a second passivating layer ( 7 ), which is transmissive for infrared radiation.
11. A passive semiconductor component according to claim 1 , wherein to form an opening the substrate ( 1 ) is removed up to the first passivating layer ( 2 ), for thermal decoupling.
12. A process for producing a passive semiconductor component, comprising,
depositing a first passivating layer ( 2 ) on a substrate ( 1 ),
depositing a WSiN-layer ( 3 ) and a first metal layer ( 4 ) over the entire surface on the first passivating layer ( 2 ),
structuring the first metal layer ( 4 ) using a first mask ( 5 ) into a first connection metallization ( 4 ′),
covering the area between the first connection metallization ( 4 ′) by means of a second mask ( 6 ) and structuring the WSiN-layer ( 3 ) to a WSiN-residue layer ( 3 ′) necessary for the construction component,
depositing a second passivating layer ( 7 ), in which openings for electrical connections are structured optionally at the ends of the WSiN-residue layer ( 3 ′) as resistance layer,
introducing metal contacts ( 8 ) in these openings,
structuring the part of the second passivating layer ( 7 ) provided between the metal contact ( 8 ) such that this includes an opening transmissive for electromagnetic radiation.
13. A process according to claim 12 , wherein the substrate ( 1 ) is etched or removed in the area between the connection metallization ( 4 ′) for thermal decoupling of the substrate bottom side up to the lower side of the first passivating layer ( 2 ).
14. A process according to claim 12 , wherein between the WSiN-residue layer ( 3 ′) and the first connectional metallization ( 4 ′) a intermediate layer sequence ( 13 , 14 , 15 ) is deposited and so structured, that this provides a thermal insulation with respect to the substrate.
15. A process according to claim 14 , wherein the intermediate layer sequence is comprised of a contact layer ( 13 ) and a BCB-layer ( 14 ) or a polyimide layer ( 15 ), structured in such a manner, that this provides insulation in the area of the thermal input towards the substrate ( 1 ).
16. A bolometer comprising, as thermistor, a passive semiconductor component comprising a thin film resistor with high thermal coefficient on a substrate comprising a first passivating layer ( 2 ), a WSiN-layer ( 3 ), and a first metal layer ( 4 ), wherein the the chemical composition of the WSiN-layer is W X Si Y N Z with x, y as main components and with the proportion of z limited to a sufficiently low level that the temperature coefficient of resistance is greater than 1%/° C. and 1/f-noise is low, and wherein said resistor exhibits absorption in the infrared radiation range.