Semiconductor component and interconnect having conductive members and contacts on opposing sides
A method for fabricating semiconductor components and interconnects includes the steps of providing a substrate, such as a semiconductor die, forming external contacts on opposing sides of the substrate by laser drilling vias through the substrate, and forming conductive members in the vias. The conductive members include enlarged terminal portions that are covered with a non-oxidizing metal. The method can be used to fabricate stackable semiconductor packages having integrated circuits in electrical communication with the external contacts. The method can also be used to fabricate interconnects for electrically engaging packages, dice and wafers for testing or for constructing electronic assemblies.
1. A semiconductor component comprising:
a semiconductor die comprising a substrate having a first side and an opposing second side, and a plurality of contacts on the first side having a first pattern;
a plurality of conductive members comprising vias through the contacts and the substrate, and a conductive material in the vias in physical contact with the contacts;
a plurality of first external contacts in electrical communication with the conductive members configured for stacking a second component on the first side in electrical communication with the contacts;
a plurality of conductors on the second side in electrical communication with the conductive members; and
a plurality of second external contacts on the second side in electrical communication with the conductors having a second pattern and configured for electrical connection to a third component.
2. The component of claim 1 wherein the second component comprises a semiconductor package and the third component comprises a circuit board.
3. The component of claim 1 wherein the first external contacts and the second external contacts comprise non-oxidizing layers having generally concave shapes.
4. The component of claim 1 wherein the contacts comprise device bond pads.
5. The component of claim 1 further comprising a first electrically insulating layer on the first side electrically insulating the first external contacts and a second electrically insulating layer on the second side electrically insulating the second external contacts.
6. A semiconductor component comprising:
a semiconductor die comprising a substrate having a first side with a first electrically insulating layer thereon, an opposing second side with a second electrically insulating layer thereon, and a plurality of contacts on the first side;
a plurality of conductive members comprising vias in the openings and the substrate, and a conductive material in physical contact with the contacts at least partially filling the vias;
a plurality of first external contacts on the first electrically insulating layer and the conductive members configured for connecting a second component to the first side; and
a plurality of second external contacts on the second electrically insulating layer and the conductive members configured for connecting a third component to the second side.
7. The component of claim 6 wherein the contacts comprise bond pads in electrical communication with integrated circuits on the die.
8. The component of claim 6 wherein the first external contacts and the second external contacts have generally concave shapes with non-oxidizing layers thereon.
9. The component of claim 6 further comprising a plurality of third electrically insulating layer in the vias.
10. The component of claim 6 further comprising a plurality of conductors on the second side in electrical communication with the conductive members configured to redistribute a pattern of the contacts.
11. An interconnect for a semiconductor component comprising:
a substrate having a first side and an opposing second side;
a plurality of vias through the substrate;
a plurality of conductive members in the vias having generally concave first terminal portions on the first side and generally concave second terminal portions on the second side;
a plurality of first contacts on the first side comprising first non-oxidizing layers on the first terminal portions;
a plurality of second contacts on the second side comprising second non-oxidizing layers on the second terminal portions; and
a plurality of third contacts on the first side and the second side in electrical communication with the first contacts and the second contacts;
the first contacts configured for mounting a first component to the first side and the second contacts configured for mounting a second component to the second side.
12. The interconnect of claim 11 wherein the third contacts comprise edge contacts.