High-voltage bidirectional switch
A bidirectional switch for switching an A.C. voltage at a load, including a monolithic component, formed in an N-type substrate, including a first vertical thyristor; a second vertical thyristor; a P-type triggering region formed opposite to the cathode of the first thyristor and an N-type triggering region formed in the P-type triggering region, the P-type triggering region being intended to receive a control signal in a negative halfwave of the A.C. voltage to trigger the first thyristor; a resistive element connected to the P-type triggering region and to the anode of the first thyristor; and a capacitor having a terminal connected to the N-type triggering region and its other terminal intended to be connected to the reference voltage.
1. A bidirectional switch for switching an A.C. voltage at a load, comprising:
a monolithic component, formed in an N-type substrate, comprising:
a first vertical thyristor comprising, from top to bottom, a first P-type region, the N-type substrate, a second P-type region, and a first N-type region contained in the second P-type region;
a second vertical thyristor comprising, from bottom to top, the second P-type region, the N-type substrate, the first P-type region, and a second N-type region contained in the first P-type region;
a P-type triggering region formed on the high substrate side opposite to the cathode of the first thyristor and an N-type triggering region formed in the P-type triggering region;
the cathode of the first thyristor and the anode of the second thyristor being intended to be connected to a terminal of the load, the anode of the first thyristor and the cathode of the second thyristor being intended to be connected to a reference voltage, and the P-type triggering region being intended to receive at least one control signal in a negative halfwave of the A.C. voltage to trigger the first thyristor;
a resistive element connected to the P-type triggering region and to the anode of the first thyristor; and
a capacitor having a terminal connected to the N-type triggering region and its other terminal intended to be connected to the reference voltage.
2. The switch of claim 1 , wherein the substrate comprises a P-type protection region surrounding the P-type triggering region and more lightly doped than the P-type triggering region, the minimum distance separating the protection region from the anode of the first thyristor being smaller than a determined distance.
3. The switch of claim 2 , wherein the protection region is in contact with the anode of the first thyristor.
4. The switch of claim 1 , wherein the capacitor is a low-voltage capacitor.
5. The switch of claim 1 , wherein the resistive element is integrated to the substrate.
6. A monolithic switching device for a switch of an A.C. voltage at a load, said switching device, formed in an N-type substrate, comprising:
a first vertical thyristor comprising, from top to bottom, a first P-type region, the N-type substrate, a second P-type region, and a first N-type region contained in the second P-type region;
a second vertical thyristor comprising, from bottom to top, the second P-type region, the N-type substrate, the first P-type region, and a second N-type region contained in the first P-type region;
a P-type triggering region formed on the upper side of the substrate opposite to the cathode of the first thyristor and an N-type triggering region formed in the P-type triggering region;
the cathode of the first thyristor and the anode of the second thyristor being intended to be connected to a terminal of the load, the anode of the first thyristor and the cathode of the second thyristor being intended to be connected to a reference voltage, and the P-type triggering region being intended to be connected to the anode of the first thyristor via a resistive element and to receive at least one control signal in a negative halfwave of the A.C. voltage to trigger the first thyristor, and the N-type triggering region being intended to be connected to a terminal of a capacitor having its other terminal connected to the reference voltage.
7. The switching device of claim 6 , wherein the substrate comprises a P-type protection region surrounding the P-type triggering region and more lightly doped than the P-type triggering region, the minimum distance separating the protection region from the anode of the first thyristor being shorter than a determined distance.
8. The switching device of claim 7 , wherein the protection region is in contact with the anode of the first thyristor.
9. The switching device of claim 6 , wherein the resistive element is integrated in the substrate.
10. A bidirectional switch comprising:
a monolithic component, formed in a substrate having a first conductivity type, comprising:
a first vertical thyristor comprising, from top to bottom, a first region having a second conductivity type, the substrate, a second region having the second conductivity type, and a first region having the first conductivity type contained in the second region;
a second vertical thyristor comprising, from bottom to top, the second region, the substrate, the first region, and a second region having the first conductivity type contained in the first region;
a first triggering region having the second conductivity type formed on the high substrate side opposite to the cathode of the first thyristor and a second triggering region having the first conductivity type formed in the first triggering region;
the cathode of the first thyristor and the anode of the second thyristor for connection to a terminal of a load, the anode of the first thyristor and the cathode of the second thyristor for connection to a reference voltage, and the first triggering region for receiving at least one control signal in a negative halfwave of an A.C. voltage to trigger the first thyristor;
a resistive connected to the first triggering region and to the anode of the first thyristor; and
a capacitor having a terminal connected to the second triggering region and its other terminal for connection to the reference voltage.
11. The switch of claim 10 , wherein the substrate comprises a protection region surrounding the first triggering region and more lightly doped than the first triggering region, a minimum distance separating the protection region from the anode of the first thyristor being less than a determined distance.
12. The switch of claim 11 , wherein the protection region is in contact with the anode of the first thyristor.
13. The switch of claim 10 , wherein the capacitor is a low-voltage capacitor.
14. The switch of claim 10 , wherein the resistive element is integrated in the substrate.
15. The switch of claim 10 , wherein the first conductivity type is N-type.
16. The switch of claim 15 , wherein the second conductivity type is P-type.
17. A monolithic switching device formed in a substrate having a first conductivity type, comprising:
a first vertical thyristor comprising, from top to bottom, a first region having a second conductivity type, the substance, a second region having the second conductivity type region, and a first region having the first conductivity type contained in the second region;
a second vertical thyristor comprising, from bottom to top, the second region, the substrate, the first region, and a second region having the first conductivity type contained in the first type region;
a first triggering region having the second conductivity type formed on the upper side of the substrate opposite to the canode of the first thyristor and a second triggering region having the first conductivity type formed in the first triggering region;
the cathode of the first thyristor and the anode of the second thyristor for connection to a terminal of the load, the anode of the first thyristor and the cathod of the second thyristor for connection to a reference voltage, and the first triggering region for connection to the anode of the first thyristor via a resistive element and for receiving at least one control signal in a negative halfwave of an A.C. voltage to trigger the first thyristor, and second triggering region for connection to a terminal of a capacitor having another terminal for connection to the reference voltage.
18. The switching device of claim 17 , wherein the substrate comprises a first protection region surrounding the first triggering region and more lightly doped than the first triggering region, a minimun distance separating the protection region from the anode of the first thyristor being less than a determined distance.
19. The switching device of claim 18 , wherein the protection region is in contact with the anode of the first thyristor.
20. The switching device of claim 17 , wherein the resistive element is integrated in the substrate.
21. The switch device of claim 17 , wherein the first conductivity type is N- type.
22. The switch device of claim 21 , wherein the second conductivity type is P- type.