Method of manufacturing a thin film battery
In a method of manufacturing a thin film battery in a chamber, a target comprising LiCoO 2 is provided on a magnetron cathode in the chamber, and a substrate is placed facing the target. A process gas is introduced into the chamber and the process gas is energized to form a plasma to sputter the target to deposit LiCoO 2 on the substrate. An ion flux of from about 0.1 to about 5 mA/cm 2 is delivered from the plasma to the substrate to enhance the crystallinity of the deposited LiCoO 2 material on the substrate. The process gas is exhausted from the chamber. The target can also be made of other materials.
1. A method of manufacturing a thin film battery in a chamber comprising a magnetron cathode, the method comprising:
(a) providing a target on the magnetron cathode in the chamber;
(b) placing a substrate comprising mica facing the target in a chamber;
(c) introducing a process gas into the chamber;
(d) energizing the process gas to form a plasma to sputter the target to deposit target material on the substrate;
(e) delivering an ion flux from the plasma to the substrate of from about 0.1 to about 5 mA/cm 2 to enhance crystallization of the target material deposited on the substrate; and
(f) exhausting the process gas from the chamber.
2. A method according to claim 1 wherein (a) comprises providing a target capable of depositing on the substrate, a film comprising LiCoO 2 .
3. A method according to claim 1 comprising applying a current at a power density level of from about 0.1 to about 20 W/cm 2 to the target while maintaining the substrate at a potential of from about −5 to about −200 V.
4. A method according to claim 1 wherein the substrate comprises mica having a thickness of less than about 100 microns.
5. A method according to claim 4 further comprising forming films on the mica substrate, the films comprising a first and second current collectors, an anode, and an electrolyte, such that the deposited target material serves as the cathode.
6. A method of manufacturing a thin film battery in a chamber comprising a magnetron cathode, the method comprising:
(a) providing a target on the magnetron cathode in the chamber, the target capable of depositing on a substrate, a lithium metal oxide film;
(b) placing a substrate facing the target in a chamber;
(c) introducing a process gas into the chamber;
(d) energizing the process gas to form a plasma to sputter the target to deposit the lithium metal oxide film on the substrate;
(e) delivering an ion flux from the plasma to the substrate of from about 0.1 to about 5 mA/cm 2 to form a crystalline lithium metal oxide film on the substrate; and
(f) exhausting the process gas from the chamber.
7. A method according to claim 6 wherein the target is capable of depositing on a substrate, a lithium motel oxide film comprising LiCoO x .
8. A method according to claim 6 wherein the target is capable of depositing on a substrate, a lithium metal oxide film comprising LiCoO 2 .
9. A method according to claim 6 wherein the target is capable of depositing on a substrate, a lithium metal oxide film comprising LiMn 2 O 2 .
10. A method according to claim 6 comprising operating the magnetron cathode at a power density level of from about 0.1 to about 20 W/cm 2 and maintaining the substrate at a potential of from about −5 to about −200 V.
11. A method according to claim 6 further comprising applying a non-uniform magnetic field about the target in the chamber comprising a weaker central magnetic field strength and a surrounding stronger peripheral magnetic field strength.
12. A method according to claim 6 comprising introducing a process gas comprising argon and oxygen and maintaining the process gas in the chamber at a pressure of from about 5 to about 25 mTorr.
13. A method according to claim 6 comprising annealing the deposited lithium metal oxide film by heating the substrate to a temperature from about 150 to about 600° C.
14. A method according to claim 6 comprising the initial step of forming a substrate comprising mica, and forming one or more films on the substrate to generate or store an electrical charge.
15. A method according to claim 14 wherein the mica substrate comprises a thickness of less than about 100 microns.
16. A method according to claim 14 further comprising forming films on the mica substrate, the films comprising a first and second current collectors, an anode, and an electrolyte, such that the deposited crystalline lithium metal oxide film serves as the cathode.
17. A method according to claim 6 further comprising cleaning the substrate before depositing lithium metal oxide film on the substrate.
18. A method according to claim 17 comprising cleaning the substrate by heating the substrate to about 400° C. in air.
19. A method of manufacturing a thin film battery in a chamber comprising a magnetron cathode, the method comprising:
(a) providing a target on the magnetron cathode in the chamber, the target capable of depositing on a substrate, a LiCoO x film;
(b) placing a substrate facing the target in a chamber;
(c) introducing a process gas into the chamber;
(d) energizing the process gas with RF of DC energy with RF or DC energy to form a plasma to sputter the target to deposit the LiCoO x film on the substrate;
(e) delivering an ion flux from the plasma to the substrate of from about 0.1 to about 5 mA/cm 2 to form a crystalline LiCoO x film on the substrate; and
(f) exhausting the process gas from the chamber.
20. A method according to claim 19 wherein the target is capable of depositing on a substrate, a LiCoO x film comprising LiCoO 2 .
21. A method according to claim 19 comprising operating the magnetron cathode at a power density level of from about 0.1 to about 20 W/cm 2 and maintaining the substrate at a potential of from about −5 to about −200 V.
22. A method according to claim 19 further comprising applying a non-uniform magnetic field about the target in the chamber comprising a weaker central magnetic field strength and a surrounding stronger peripheral magnetic field strength.
23. A method according to claim 19 comprising introducing a process gas comprising argon and oxygen and maintaining the process gas in the chamber at a pressure of from about 5 to about 25 mTorr.
24. A method according to claim 19 comprising annealing the deposited LiCoO x film by heating the substrate to a temperature from about 150 to about 600° C.
25. A method according to claim 19 comprising the initial step of forming a substrate comprising mica, and forming one or more films on the substrate to generate or store an electrical charge.
26. A method according to claim 25 wherein the mica substrate comprises a thickness of less than about 100 microns.
27. A method according to claim 25 further comprising forming films on the mica substrate, the films comprising a first and second current collectors, an anode, and an electrolyte, such that the deposited crystalline LiCoO x film serves as the cathode.
28. A method according to claim 19 further comprising cleaning the substrate before depositing the LiCoO x film on the substrate.
29. A method according to claim 28 comprising cleaning the substrate by heating the substrate to about 400° C. in air.