Method of transferring a device, a method of producing a device holding substrate, and a device holding substrate
The interface between a first substrate and light-emitting diodes formed on the first substrate is selectively irradiated with an energy beam and transmits the energy beam through the first substrate, thereby selectively releasing the light-emitting diodes. The light-emitting diodes are then transferred onto a device holding layer included on a device holding substrate. Subsequently, the light-emitting diodes are transferred onto a second substrate. The irradiation of the interface with the energy beam enables the devices to be easily released from the first substrate.
1. A method for transferring a device, comprising the steps of:
irradiating, selectively, an interface between a first substrate and a device having a pointed head portion included on the first substrate with an energy beam and transmitting the energy beam through the first substrate to selectively release the device;
transferring the released device onto a device holding layer included on a device holding substrate, wherein the device holding layer includes a surface with a recessed portion shaped to fit the pointed head portion; and
transferring the device from the device holding layer onto a second substrate.
2. A method for transferring a device as claimed in claim 1 , further comprising the step of cleaning the device on the device holding layer after the device is transferred onto the device holding layer.
3. A method for transferring a device as claimed in claim 1 , further comprising the step of providing an adhesive layer on the second substrate wherein the adhesive layer is irradiated with the energy beam when the device is transferred from the device holding layer onto the second substrate.
4. A method for transferring a device as claimed in claim 1 , wherein the first substrate is a sapphire substrate.
5. A method for transferring a device as claimed in claim 1 , wherein the device is a light-emitting device.
6. A method for transferring a device as claimed in claim 1 , wherein the device holding layer is a silicone resin layer.
7. A method for transferring a device as claimed in claim 1 , wherein the device is formed of a material which produces ablation upon irradiation with the energy beam, and wherein ablation is generated by the selective irradiation with the energy beam to cause exfoliation at an interface between the device and the first substrate.
8. A method for transferring a device as claimed in claim 1 , wherein the material is a nitride semiconductor material.
9. A method for transferring a device as claimed in claim 8 , wherein the nitride semiconductor material is a GaN-based material.
10. A method for transferring a device, comprising the steps of:
irradiating, selectively, an interface between a first substrate and a device having a pointed head portion and a flat plate-shaped structure included on the first substrate with an energy beam to selectively release the device;
transferring the released device onto a device holding layer included on a device holding substrate;
cleaning the device on the device holding layer; and
transferring the device from the device holding layer onto a second substrate.
11. A method for transferring a device as claimed in claim 10 , further comprising the step of providing an adhesive layer on the second substrate wherein the adhesive layer is irradiated with the energy beam when the device is transferred from the device holding layer onto the second substrate.
12. A method for transferring a device as claimed in claim 10 , wherein the first substrate is a sapphire substrate.
13. A method for transferring a device as claimed in claim 10 , wherein the device is a light-emitting device.
14. A method for transferring a device as claimed in claim 10 , wherein the device holding layer includes a surface with a recessed portion shaped to fit the pointed head portion.
15. A method for transferring a device as claimed in claim 10 , wherein the device holding layer is a silicone resin layer.
16. A method for transferring a device as claimed in claim 10 , wherein the device is formed of a material which produces ablation upon irradiation with the energy beam, and wherein ablation is generated by the selective irradiation with the energy beam to cause exfoliation at an interface between the device and the first substrate.
17. A method for transferring a device as claimed in claim 16 , wherein the material is a nitride semiconductor material.
18. A method for transferring a device as claimed in claim 17 , wherein the nitride semiconductor material is a GaN-based material.