III-Phosphide and III-Arsenide flip chip light-emitting devices
A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
1. A method of forming a light-emitting semiconductor device, said method comprising:
forming a structure including a stack of semiconductor layers overlying a host substrate, said stack including an active region, said active region comprising a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof;
attaching a superstrate to a first side of said structure, said superstrate substantially transparent to light emitted by said active region;
removing at least a portion of said host substrate; and
forming a first electrical contact and a second electrical contact on a second side of said structure opposite to said first side, said first electrical contact and said second electrical contact electrically coupled to apply a voltage across said active region.
2. The method of claim 1 , further comprising bonding said superstrate to said stack.
3. The method of claim 1 , further comprising growing said superstrate on said stack.
4. The method of claim 1 , wherein the act of removing said portion of said host substrate precedes the act of attaching said superstrate to said structure.
5. The method of claim 1 , wherein the act of attaching said superstrate to said structure precedes the act of removing said portion of said host substrate.