Semiconductor device
There is provided a semiconductor device having a wafer-level package structure in which CSP structures are formed at a wafer level, which comprises a semiconductor substrate, an electrode pad formed over the semiconductor substrate, and a tail terminal formed to have an area that is smaller than the electrode pad and connected electrically to the electrode pad.
1. A semiconductor device having a wafer-level package structure in which CSP structures are formed at a wafer level, comprising:
a semiconductor substrate;
an electrode pad formed over the semiconductor substrate;
a tail terminal formed to have an area that is smaller than the electrode pad and connected electrically to the electrode pad, and functioning as an external connection terminal;
a barrier conductive film covering an upper surface and a side surface of the tail terminal; and
a resin layer formed at a circumference of the tail terminal, the resin layer having an opening portion on an area containing the tail terminal so that a space is formed from a side surface of the tail terminal to an outside thereof.
2. A semiconductor device having a wafer-level package structure in which CSP structures are formed at a wafer level, comprising:
a semiconductor substrate;
an electrode pad formed over the semiconductor substrate;
a protection insulating film having an opening portion therein on the electrode pad;
a cap conductive film formed to bury an inside of the opening portion and connected electrically to the electrode pad;
a tail terminal formed to have an area that is smaller than the electrode pad and connected electrically to the cap conductive film, and functioning as an external connection terminal;
a barrier conductive film covering an upper surface and a side surface of the tail terminal; and
a resin layer formed at a circumference of the tail terminal, the resin layer having an opening portion on an area containing the tail terminal so that a space is formed from a side surface of the tail terminal to an outside thereof.
3. A semiconductor device according to claim 1 , wherein the electrode pad and the tail terminal are made of copper (Cu).
4. A semiconductor device according to claim 1 , further comprising:
a barrier conductive film formed between the electrode pad and the tail terminal; and
wherein the tail terminal is connected electrically to the electrode pad via the barrier conductive film.
5. A semiconductor device according to claim 4 , wherein the electrode pad is composed of a metal material that is different from the tail terminal.
6. A semiconductor device having a wafer-level package structure in which CSP structures are formed at a wafer level, comprising:
a semiconductor substrate;
an electrode pad formed over the semiconductor substrate; and
a tail terminal formed to have an area that is smaller than the electrode pad and connected electrically to the electrode pad, wherein the electrode pad is made of aluminum (Al) or aluminum alloy, and the barrier conductive film and the tail terminal are formed of a single film made of metal selected from a group consisting of gold (Au), platinum (Pt), and nickel (Ni), or a laminated film.
7. A semiconductor device having a wafer-level package structure in which CSP structures are formed at a wafer level, comprising:
a semiconductor substrate;
an electrode pad formed over the semiconductor substrate; and
a tail terminal formed to have an area that is smaller than the electrode pad and connected electrically to the electrode pad, wherein a diameter of the tail terminal is set to ⅓ to ⅔ of a diameter of the electrode pad, and the tail terminal is formed in a portion that corresponds to a center portion of the electrode pad.
8. A semiconductor device according to claim 1 , wherein the barrier conductive film includes a nickel film of 1 μm thickness, a platinum film of 1 μm thickness, and a gold film of 1 μm thickness formed in sequence from the tail terminal.
9. A semiconductor device according to claim 1 , wherein the resin layer extends in a height direction beyond the tail terminal.
10. The semiconductor device according to claim 2 , wherein the barrier conductive film includes a nickel film of 1 μm thickness, a platinum film of 1 μm thickness, and a gold film of 1 μm thickness formed in sequence from the tail terminal.