Organic metal precursor for use in forming metal containing patterned films
An organic metal precursors containing one or more organic ligands bonded to one or more metal atoms, wherein the organic ligand is rapidly dissociated from the metal atom upon exposure to light and degraded leaving a metal or a metal oxide. By using the organic metal precursors, an electroconductive, metal-containing patterned film can be easily deposited on a substrate at room temperature under atmospheric pressure without using photosensitive resins.
1. An organic metal precursor represented by the formula (I):
M m L n L′ o X p (I)
Wherein, M is a transition metal atom selected from the group consisting of Ag, Au, Co, Cu, Pd, Ni, Pt, Zn and Cd;
L is a thioether represented by the formula (II) or (III);
wherein in the formula (II), each of R 1 and R 2 , independently, is a C 2-20 straight-chain, branched-chain or cyclic alkyl, alkenyl or alkynyl group, or an allyl group;
in the formula (III), each of R 3 and R 4 , independently, is a hydrogen atom, or a C 1-15 straight-chain or branched-chain alkyl group, and y is an integer from 2 to 10;
L′ is a ligand selected from the group consisting of amines, thiols, selenols and phosphines;
X is an anion selected from the group consisting of halogeno, hydroxide (OH − ), cyanide (CN − ), nitroxyl (NO − ), nitrite (NO 2 − ), nitrate (NO 3 − ), azide (N 3 − ), thiocyanato, isothiocyanato, tetraalkylborate, tetrahaloborate, hexafluorophosphate (PF 6 − ), triflate (CF 3 SO 3 − ), tosylate(Ts − ), sulfate(SO 4 2− ), and carbonate (CO 3 2− );
each of m and n, independently, is an integer from 1 to 10; and
each of o and p, independently, is an integer from 0 to 10.
2. The organic metal precursor according to claim 1 , wherein each of R 1 and R 2 , independently, is selected from the group consisting of ethyl, propyl, isopropyl, isobutyl and phenyl.