Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device
View Patent ↗In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.
1. A multi-beam semiconductor laser including nitride III–V compound semiconductor layers formed over one major surface of a substrate to form a laser structure, and including an anode electrode and a cathode electrode formed in connection with at least a portion of the nitride III–V compound semiconductor layers, wherein
at least one of the anode electrode and the cathode electrode being formed over the other of the anode electrode and the cathode electrode in an electrically insulated condition.
2. The multi-beam semiconductor laser according to claim 1 wherein at least one of the anode electrode and the cathode electrode is formed over the other of the anode electrode and the cathode electrode via an insulating film.
3. The multi-beam semiconductor laser according to claim 1 wherein at least a part of each of the anode electrode and the cathode electrode are exposed externally.
4. The multi-beam semiconductor laser according to claim 1 wherein the anode electrode is formed over the cathode electrode via an insulating film.
5. The multi-beam semiconductor laser according to claim 4 wherein at least a part of each of the anode electrode and the cathode electrode are exposed externally.
6. The multi-beam semiconductor laser according to claim 1 wherein an upper portion of the substrate is made of a nitride III–V compound semiconductor formed by lateral growth and having periodical low-defect regions.
7. The multi-beam semiconductor laser according to claim 6 wherein light emitting portions are formed over the low-defect region.
8. The multi-beam semiconductor laser according to claim 1 , which is packaged to orient the nitride III–V compound semiconductor layers downward.
9. The multi-beam semiconductor laser according to claim 1 wherein a plurality of light emitting portions are isolated from each other.
10. The multi-beam semiconductor laser according to claim 9 wherein the individual light emitting portions are isolated by a groove.
11. The multi-beam semiconductor laser according to claim 9 wherein the individual light emitting portions are isolated by an insulator.
12. A multi-beam semiconductor laser including semiconductor layers formed over one major surface of a substrate to form a laser structure, and including an anode electrode and a cathode electrode formed over the semiconductor layers, wherein
at least one of the anode electrode and the cathode electrode being formed over the other of the anode electrode and the cathode electrode in an electrically insulated condition.
13. A semiconductor light emitting device including semiconductor layers formed over one major surface of a substrate to form a light emitting structure, and including an anode electrode and a cathode electrode over the semiconductor layers, wherein
at least one of the anode electrode and the cathode electrode being formed over the other of the anode electrode and the cathode electrode in an electrically insulated condition.
14. A semiconductor device including semiconductor layers funned over one major surface of a substrate to four a device structure, and including an n-type electrode and a p-type electrode over the semiconductor layers, wherein
at least one of the n-type electrode and the p-type electrode being formed over the other in an electrically insulated condition.