IP Library Granted Patent US 7,020,372
Granted Patent B2
US 7,020,372 · App. 10/893,719 · Granted Mar 28, 2006

Optical devices with engineered nonlinear nanocomposite materials

Assignee: UltraDots, Inc.
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Quick Facts
Patent No.
US 7,020,372
App. No.
10/893,719
Granted
Mar 28, 2006
Kind
B2
Abstract

The invention relates to an optical device. The optical device comprises a waveguide core and a nanocomposite material optically coupled to the waveguide core. The nanocomposite material includes a plurality of quantum dots. The nanocomposite material has a nonlinear index of refraction γ that is at least 10 −9 cm 2 /W when irradiated with an activation light having a wavelength λ between approximately 3×10 −5 cm and 2×10 −4 cm.

Claims (24)

1. An optical device comprising:

a waveguide core including a portion formed of a nanocomposite material, said nanocomposite material including:

a matrix material; and

a plurality of quantum dots dispersed in said matrix material, a quantum dot of said plurality of quantum dots including a substantially crystalline core that includes a semiconductor material selected from the group consisting of Si and Ge, said quantum dot being substantially defect free such that said quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent.

2. The optical device of claim 1 , further comprising a cladding surrounding said waveguide core.

3. The optical device of claim 1 , wherein said waveguide core includes a plurality of portions positioned at respective locations along a longitudinal axis of said waveguide core, said plurality of portions being formed of said nanocomposite material.

4. The optical device of claim 1 , wherein said waveguide core is a first waveguide core, said optical device further comprising a second waveguide core optically coupled to said first waveguide core.

5. The optical device of claim 1 , wherein said nanocomposite material has a nonlinear index of refraction γ that is at least 10 −9 cm 2 /W when irradiated with light having a wavelength λ between approximately 3×10 −5 cm and 2×10 −4 cm.

6. The optical device of claim 5 , wherein γ is at least 10 −8 cm 2 /W.

7. The optical device of claim 5 , wherein said nanocomposite material has a figure-of-merit that is at least 1, said figure-of-merit being defined as 2γ/βλ, where β is a two-photon absorption coefficient of said nanocomposite material expressed in cm/W.

8. The optical device of claim 7 , wherein said figure-of-merit is at least 1.5.

9. The optical device of claim 1 , wherein said matrix material is selected from the group consisting of polymers and glasses.

10. The optical device of claim 1 , wherein said nanocomposite material comprises more than 10 percent by weight of said plurality of quantum dots.

11. The optical device of claim 1 , wherein said nanocomposite material comprises at least 40 percent by weight of said plurality of quantum dots.

12. The optical device of claim 1 , wherein said plurality of quantum dots have a peak size between approximately 1 nm and 100 nm.

13. The optical device of claim 1 , wherein said quantum dot further includes a shell surrounding said substantially crystalline core.

14. The optical device of claim 1 , wherein said semiconductor material is Si, said shell including an oxide SiO n with n being between approximately 0 and 2.

15. The optical device of claim 1 , wherein said semiconductor material is Ge, said shell including an oxide GeO n with n being between approximately 0 and 2.

16. The optical device of claim 1 , wherein said quantum dot further includes a ligand layer surrounding said substantially crystalline core, said ligand layer including a plurality of surface ligands.

17. The optical device of claim 16 , wherein a surface ligand of said plurality of surface ligands includes a first portion and a second portion, said first portion being coupled to said substantially crystalline core, said second portion being chemically compatible with said matrix material to facilitate dispersing said quantum dot in said matrix material.

18. The optical device of claim 1 , wherein said quantum efficiency is at least 20 percent.

19. The optical device of claim 1 , wherein said quantum efficiency is at least 50 percent.

20. The optical device of claim 1 , wherein said semiconductor material is Si, said substantially crystalline core having a diameter between approximately 1 nm and 20 nm.

21. The optical device of claim 1 , wherein said semiconductor material is Ge, said substantially crystalline core having a diameter between approximately 1 nm and 50 nm.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2012
From: OMNIPV, INC.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 027544/0144 →
CHANGE OF NAME Recorded Nov 17, 2011
From: ULTRADOTS, INC.
To: OMNIPV, INC.
Reel/Frame 027248/0985 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2011
From: LEE, HOWARD WING HOON; CHIN, ALAN HAP; PFENNINGER, WILLIAM MATTHEW
To: ULTRAPHOTONICS, INC.
Reel/Frame 027239/0842 →
CHANGE OF NAME Recorded Nov 16, 2011
From: ULTRAPHOTONICS INC.
To: ULTRADOTS INC.
Reel/Frame 027241/0892 →
Continuity (7)
Division 1021199100 · Aug 2, 2002
Provisional Application 6030989800 · Aug 2, 2001
Provisional Application 6030990500 · Aug 2, 2001
Provisional Application 6030997900 · Aug 2, 2001
Provisional Application 6031009000 · Aug 2, 2001
Provisional Application 6031009500 · Aug 2, 2001
Related Publication 20050058416A1 · Mar 17, 2005