IP Library › Granted Patent US 7,023,757
Granted Patent B2
US 7,023,757 · App. 10/373,042 · Granted Apr 4, 2006

Semiconductor device

Assignee: Hitachi, Ltd.
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Quick Facts
Patent No.
US 7,023,757
App. No.
10/373,042
Granted
Apr 4, 2006
Kind
B2
Abstract

When a leakage current of a circuit block under a non-use state is reduced by means of a power switch, frequent ON/OFF operations of the switch within a short time invite an increase of consumed power, on the contrary. Because a pre-heating time is necessary from turn-on of the switch till the circuit block becomes usable, control of the switch during an operation deteriorates a processing time of a semiconductor device. The switch is ON/OFF-controlled with a task duration time of a CPU core for controlling logic circuits and memory cores as a unit. After the switch is turned off, the switch is again turned on before termination of the task in consideration of the pre-heating time.

Claims (32)

1. A semiconductor device comprising:

a power source line;

a plurality of circuit blocks containing at least one first circuit block;

at least one switch so arranged as to respectively correspond to said at least one first circuit block, for controlling the supply of a power source from said power source line to said first circuit block; and

a processor for executing a task by keeping at least one of said plurality of circuit blocks under a use state;

wherein said first circuit block receives a state signal instructing a shift thereof to a non-use state and turns off said switch corresponding thereto and, in case of execution of said task by said processor, said switch is turned on before said first circuit block receives a state signal instructing a shift thereof to a use state.

2. A semiconductor device according to claim 1 , wherein said plurality of circuit blocks includes at least one second circuit block connected to said power source line without passing through a switch.

3. A semiconductor device according to claim 1 , wherein a period of time T-off in which said first circuit block turns off said switch satisfies a relation:

T-off<(task duration time T-task)−(pre-heating time T-heat),

and said pre-heating time T-heat is decided in accordance with at least a circuit scale of said first circuit block.

4. A semiconductor device according to claim 1 , wherein a period of time T-off in which said first circuit block turns off said switch satisfies a relation:

time T-min<T-off,

and said time T-min is decided in accordance with consumed power by a sub-threshold current of said first circuit block and with consumed power for driving a power source switch.

5. A semiconductor device according to claim 1 , wherein said first circuit block includes a flip-flop for inputting and outputting data in response to input of a clock signal, a logic circuit for receiving an output of said flip-flop and a first gate circuit, wherein said first gate circuit receives a state signal instructing a shift of said first circuit block to a non-use state and cuts off input of said clock signal to said flip-flop in execution of a task by said processor.

6. A semiconductor device according to claim 5 , which further includes a second gate circuit, wherein said second gate circuit receives a state signal instructing a shift of said first circuit block to a non-use state and controls an output of said logic circuit to a predetermined level during execution of a task by said processor.

7. A semiconductor device according to claim 1 , wherein said first circuit block includes a plurality of element circuits, wherein at least one of said plurality of element circuits can discretely control the supply of power.

8. A semiconductor device comprising:

a power source line;

a plurality of circuit blocks containing at least one first circuit block;

at least one switch so arranged as to respectively correspond to said at least one first circuit block, for controlling the supply of a power source from said power source line to said first circuit block; and

a processor for executing a task by keeping at least one of said plurality of circuit blocks under a use state;

wherein said first circuit block controls said switch in accordance with a state signal instructing a shift of said first circuit block to a non-use state or a use state in accordance with execution of a task by said processor.

9. A semiconductor device comprising:

a power source line;

a plurality of circuit blocks containing at least one first circuit block;

at least one switch so arranged as to respectively correspond to said at least one first circuit block, for controlling the supply of a power source from said power source line to said first circuit block; and

a processor for executing a task by keeping at least one of said plurality of circuit blocks under a use state;

wherein said switch is controlled in accordance with a duration of execution time of said task as a unit.

10. A semiconductor device according to claim 8 , wherein

when said switch is controlled during execution of said task, the first circuit block shifts from a non-use state to a use state.

11. A semiconductor device according to claim 9 , wherein

when said switch is controlled during execution of a task by said processor, the first circuit block shifts from a non-use state to a use state.

Assignments (4)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
MERGER AND CHANGE OF NAME Recorded May 17, 2011
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 026287/0075 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2007
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 019881/0288 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 17, 2003
From: WATANABE, TAKAO; UCHIYAMA, KUNIO; NISHII, OSAMU; IRIE, NAOHIKO; MIZUNO, HIROYUKI
To: HITACHI, LTD.
Reel/Frame 014181/0639 →
Priority Claims (1)
JP 2002-175170 · Jun 17, 2002 · national
Continuity (1)
Related Publication 20030231526A1 · Dec 18, 2003