Active hardmask for lithographic patterning
In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
1. A method comprising:
directing extreme ultraviolet electromagnetic energy from an energy source toward a photoresist, the photoresist having a first surface closer to the energy source than a second surface; and
redirecting a portion of the electromagnetic energy reaching the second surface back into the photoresist, wherein the redirecting comprises fluorescing the portion of the electromagnetic energy.
2. The method of claim 1 , wherein the redirecting comprises both fluorescing and reflecting the portion of the electromagnetic energy.
3. A method comprising:
directing extreme ultraviolet electromagnetic energy from an energy source toward a photoresist, the photoresist having a first surface closer to the energy source than a second surface;
redirecting a portion of the electromagnetic energy reaching the second surface back into the photoresist, wherein the redirecting comprises reflecting the portion of the electromagnetic energy, and wherein the reflecting comprises reflecting with a Bragg reflector.
4. The method of claim 3 , wherein the reflecting comprises reflecting with a reflector comprising multiple layers and wherein the multiple layers comprise ruthenium and silicon.
5. A method comprising:
directing extreme ultraviolet electromagnetic energy from an energy source toward a photoresist, the photoresist having a first surface closer to the energy source than a second surface;
redirecting a portion of the electromagnetic energy reaching the second surface back into the photoresist, wherein said redirecting comprises redirecting at least 33% of the electromagnetic energy reaching the second surface.
6. A method for transferring a pattern to a semiconductor substrate, the method comprising:
applying a reflective hardmask above a surface of the semiconductor substrate;
applying a photoresist to a surface of the reflective material;
directing extreme ultraviolet energy toward the photoresist; and
reflecting at least a portion of the energy back into the photoresist;
wherein the applying the reflective hardmask comprises applying a Bragg reflector.
7. The method of claim 6 , wherein the applying the reflective hardmask comprises applying a plurality of layers, and wherein the plurality of layers comprise ruthenium and silicon.
8. The method of claim 6 , further comprising fluorescing radiation into the photoresist.
9. The method of claim 6 , wherein the reflecting at least a portion of the energy back into the photoresist comprises reflecting back into the photoresist at least 33% of the extreme ultraviolet energy reaching a lower surface of the photoresist.