Breakdown voltage adjustment for bipolar transistors
Devices and methods are disclosed related to a bipolar transistor device and methods of fabrication. A top region is formed at a surface of and within a base region. The top region is formed by implanting a dopant of an opposite conductivity to that of the base region. However, the top region remains of the same conductivity type as the base region (e.g., n-type or p-type). This implanting, also referred to as counterdoping, increases resistivity of the top region and thus improves an emitter-base breakdown voltage. Additionally, this implanting does not have a substantial detrimental affect on a beta value, also referred to as an amplification property, or a collector emitter breakdown voltage, also referred to as BVceo, for the transistor. The beta value and the collector emitter breakdown voltage are mainly a function of a bottom portion of the base region.
1. A method of fabricating a bipolar transistor device comprising:
selectively implanting a dopant of n-type conductivity in a substrate;
growing an epitaxial layer on the substrate and diffusing a portion of the implanted n-type dopant into the epitaxial layer forming a buried layer, the buried layer being n-type;
selectively implanting a dopant of n-type conductivity into the epitaxial layer forming a deep collector, the deep collector being n-type;
selectively implanting a dopant of n-type conductivity into the epitaxial layer forming a collector region, the collector region being n-type;
selectively implanting a dopant of p-type conductivity within the collector region forming a base region, the base region being p-type, wherein selectively implanting the dopant of p-type conductivity to form the base region comprises performing ion implantation at a first energy/velocity and a first dose;
selectively implanting a dopant of n-type conductivity within the base region forming a top region at a surface of the base region, the top region remaining p-type; wherein selectively implanting the dopant of n-type conductivity within the base region forming the top region comprises performing ion implantation at a second velocity and a second dose, the second velocity being about one-third that of the first velocity and the second dose being less than the first dose; and
selectively implanting a dopant of n-type conductivity within the base region forming an emitter region, the emitter region being n-type.
2. The method of claim 1 , wherein selectively implanting the dopant of p-type conductivity within the base region forming the top region encreases resistance within the top region.
3. The method of claim 1 , further comprising forming isolation regions over the epitaxial layer.
4. A method of fabricating a bipolar transistor comprising:
forming a collector region in a substrate;
forming a base region within the collector region, the base region being of a first conductivity type and having a dopant concentration profile associated therewith;
after forming the collector region and the base region, forming a top region within the base region by counterdoping, the top region being of the first conductivity type, the top region reducing a gradient associated with the dopant concentration profile, wherein forming the base region and forming the top region are performed during a single masking operation; and
after said counterdoping, forming an emitter region within the base region, the emitter region being of a second conductivity type.
5. The method of claim 4 , further comprising performing an additional masking operation after forming the top region and prior to forming the emitter region.
6. A method of fabricating a bipolar transistor device comprising:
forming a collector region in a substrate;
then, forming a base region within the collector region, the base region being of a first conductivity type, the base region having a top region at a surface of the base region and a bottom portion below the top region;
then, reducing a dopant concentration of the top region of the base region, wherein the steps of forming a base region and reducing a dopant concentration of the top region are performed during a single masking operation;
forming an emitter region within the base region, the emitter region being of a second conductivity type.
7. The method of claim 6 , wherein reducing the dopant concentration of the top region comprises counterdoping the top region with a dose of a dopant having an opposite conductivity to that of the base region to obtain a desired breakdown voltage, the desired breakdown voltage corresponding to the dose of the dopant.
8. The method of claim 6 , wherein reducing the dopant concentration of the top region comprises reducing the dopant concentration of the top region by about 10 percent.
9. The method of claim 6 , wherein the bottom portion of the base region is formed with a peak dopant concentration of about 5×10 16 ions/cm 3 .
10. The method of claim 6 , wherein prior to reducing the dopant concentration of the top region, the top region is formed with a dopant concentration of about 5.0×10 17 ions/cm 2 .
11. The method of claim 10 , wherein reducing the dopant concentration of the top region reduces the dopant concentration to about 4.5×10 17 ions/cm 2 .
12. The method of claim 6 , wherein the base region is formed via ion implantation with a dose of about 1×10 13 ions/cm 2 of a p-type dopant to yield a dopant concentration of about 5×10 17 ions/cm 3 near the surface of the base region.
13. The method of claim 12 , wherein the dopant concentration is reduced by counterdoping the top region via ion implantation with a dose of about 1×10 12 ions/cm 2 of an n-type dopant to reduce the dopant concentration to about 4.5×10 17 ions/cm 3 .