Titanium carboxylate films for use in semiconductor processing
The present invention involves the formation of titanium carbonate films that exhibit improved hydrolytic stability and photosensitivity. Such films can be used in semiconductor processing to deposit titanium and titanium oxide layers on a substrate and to form patterns without the use of photoresists. Preferred titanium carboxylates are non-branched and branched carboxylates wherein the alkoxide component is an alcohol, branched titanium carboxylates wherein the alkoxide component is a diol, non-branched and branched titanium alpha hydroxy carboxylate compounds, and titanium dicarboxylate compounds.
1. A photosensitive and hydrolytically stable amorphous titanium carboxylate film wherein said film is deposited on a substrate and wherein said film is formed from a combination comprising: (A) one or more titanium alkoxide; (B) one or more solvent; and (C) one or more acid ligand.
2. A hydrolytically stable amorphous titanium carboxylate film wherein said film is deposited on a substrate and wherein said film is formed from a combination comprising: (A) one or more titanium alkoxide; (B) one or more solvent; and (C) one or more acid ligand.
3. A photosensitive titanium carboxylate film wherein said film is deposited on a substrate wherein the titanium carboxylate film is formed from a solid precursor that was purified before use and wherein said film is formed from a combination comprising: (A) one or more titanium alkoxide; (B) one or more solvent; and (C) one or more acid ligand.
4. The film of claim 1 , 2 or 3 , wherein the titanium carboxylate is selected from the group consisting of non-branched titanium carboxylates and branched carboxylates wherein the alkoxide component is an alcohol; branched titanium carboxylates wherein the alkoxide component is a diol; non-branched titanium alpha hydroxy carboxylate compounds; branched titanium alpha hydroxy carboxylate compounds, and titanium dicarboxylate compounds.
5. The film of claim 1 , 2 or 3 , wherein the titanium carboxylate is water soluble.
6. The film of claim 2 , wherein the loss of film thickness is less than about 20% over 24 hours in atmospheric conditions.
7. The film of claim 2 , wherein the loss of film thickness is less than about 10% over 24 hours in atmospheric conditions.
8. The film of claim 3 , wherein said film has substantially converted with less than about 1.4 J/cm 2 of 254 nm radiation by IR analysis.
9. The film of claim 3 , wherein said film has substantially converted with less than about 900 mJ/cm 2 of 254 nm radiation by IR analysis.
10. The film of claim 3 , wherein said film has substantially converted with about 500 mJ/cm 2 or less of 254 nm radiation by IR analysis.
11. The film of claim 1 , wherein the loss of film thickness is less than about 20% over 24 hours in atmospheric conditions and said film has substantially converted with less than about 900 mJ/cm 2 of 254 nm radiation by IR analysis.
12. The film of claim 1 , wherein the loss of film thickness is about 10% or less over 24 hours in atmospheric conditions and said film has substantially converted with about 500 mJ/cm 2 or less of 254 nm radiation by IR analysis.
13. The film of claim 1 , wherein the loss of film thickness is less than about 10% over 24 hours in atmospheric conditions and said film has substantially converted with about 500 mJ/cm 2 or less of 254 nm radiation by IR analysis.
14. A method for depositing a metal containing layer on a substrate, the method which comprises the steps of:
a) providing a titanium carboxylate precursor;
b) depositing said precursor as a film on a substrate, wherein said film is hydrolytically stable and amorphous, wherein said film is formed from a combination comprising: (A) one or more titanium alkoxide; (B) one or more solvent; and (C) one or more acid ligand.
15. The method of claim 14 , wherein the loss of film thickness is less than about 20% over 24 hours in atmospheric conditions.
16. The method of claim 14 , wherein the loss of film thickness is about 10% or less over 24 hours in atmospheric conditions.
17. The method of claim 14 , wherein the loss of film thickness is less than about 1% over 24 hours in atmospheric conditions.
18. A method for depositing a metal containing layer on a substrate, the method which comprises the steps of:
a) providing a titanium carboxylate precursor;
b) depositing said precursor as a film on a substrate, wherein said film is photosensitive, the titanium carboxylate precursor is a solid and the precursor is purified before depositing as a film and wherein said film is formed from a combination comprising: (A) one or more titanium alkoxide; (B) one or more solvent; and (C) one or more acid ligand.
19. The method of claim 18 , wherein said film has substantially converted with less than about 1.4 J/cm 2 of 254 nm radiation by IR analysis.
20. The method of claim 18 , wherein said film has substantially converted with less than about 900 mJ/cm 2 of 254 nm radiation by IR analysis.
21. The method of claim 18 , wherein said film has substantially converted with about 500 mJ/cm 2 or less of 254 nm radiation by IR analysis.
22. A method for depositing a metal containing layer on a substrate, the method which comprises the steps of:
a) providing a titanium carboxylate precursor;
b) depositing said precursor as a film on a substrate, wherein said film is hydrolytically stable, photosensitive, and amorphous and is formed from a combination comprising: (A) one or more titanium alkoxide; (B) one or more solvent; and (C) one or more acid ligand.
23. The method of claim 22 , wherein the loss of film thickness is about 10% or less over 24 hours in atmospheric conditions and said film has substantially converted with about 500 mJ/cm 2 or less of 254 nm radiation by IR analysis.
24. The method of claim 22 , wherein the loss of film thickness is about 10% or less over 24 hours in atmospheric conditions and said film has substantially converted with about 500 mJ/cm 2 or less of 254 nm radiation by IR analysis.
25. The method of claims 14 , 18 , or 22 , wherein said film is soluble in water and wherein said method further comprises the steps of:
c) converting at least a portion of the precursor film;
d) developing the precursor layer wherein the developer consists of water.
26. The method of claim 25 wherein said developing forms a pattern in the precursor layer and wherein said method further comprises the step of:
e) transferring the pattern to the substrate, whereby a photoresist is not used in forming the pattern.
27. The method of claim 25 , further comprising converting with an energy source selected from light, electron beam irradiation, ion beam irradiation, and mixtures thereof.
28. The film of claims 1 or 2 wherein the titanium carboxylate film is formed from a solid precursor that was purified before use.
29. The method of claims 14 or 22 wherein the titanium carboxylate precursor is a solid and purified before depositing as a film.