IP Library › Granted Patent US 7,092,308
Granted Patent B2
US 7,092,308 · App. 10/981,367 · Granted Aug 15, 2006

Portable data storage apparatus

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,092,308
App. No.
10/981,367
Granted
Aug 15, 2006
Kind
B2
Abstract

A memory card including a non-volatile memory and a power management unit for receiving an external supply voltage to supply an operating voltage to the non-volatile memory, wherein when the external supply voltage is lower than a detection voltage, the power management unit boosts the external supply voltage and outputs the boosted voltage as the operating voltage of the non-volatile memory.

Claims (38)

1. A memory card comprising:

a non-volatile memory; and

a power management unit for receiving an external supply voltage to supply an operating voltage to the non-volatile memory, wherein when the external supply voltage is lower than a detection voltage, the power management unit boosts the external supply voltage and outputs the boosted voltage as the operating voltage of the non-volatile memory.

2. The memory card of claim 1 , wherein the detection voltage is higher than a minimum operating voltage of an operating range of the non-volatile memory and lower than the operating voltage.

3. The memory card of claim 2 , wherein when the external supply voltage is higher than the detection voltage and lower than the operating voltage, the power management unit outputs the external supply voltage as the operating voltage.

4. The memory card of claim 2 , wherein when the external supply voltage is lower than the detection voltage, the power management unit boosts the external supply voltage up to the detection voltage.

5. The memory card of claim 1 , wherein the detection voltage is a minimum operating voltage of an operating range of the non-volatile memory.

6. The memory card of claim 5 , wherein when the external supply voltage is higher than the operating voltage, the power management unit regulates the external supply voltage up to the operating voltage.

7. The memory card of claim 1 , wherein the non-volatile memory is a flash memory, a ferro-electric RAM, a magneto-resistive RAM, or a phase-change RAM.

8. The memory card of claim 1 , wherein the power management unit comprises a passive capacitor and boosts the external supply voltage, the passive capacitor being installed as an individual element on a printed circuit board where the power management unit is installed.

9. The memory card of claim 1 , wherein the power management unit includes a level detector circuit for detecting whether the external supply voltage is lower than a detection voltage and a voltage converter circuit for either boosting the external supply voltage or regulating the external supply voltage to the operating voltage based on a detection result of the level detector circuit.

10. The memory card of claim 9 , wherein the voltage converter circuit comprises:

a booster for operating in response to an output of the level detector circuit and boosting the external supply voltage, the boosted voltage being outputted as the operating voltage; and

a regulator for regulating the external supply voltage to the operating voltage in response to the output of the level detector circuit.

11. The memory card of claim 10 , wherein the booster comprises a passive capacitor installed as an individual element on a printed circuit board where the power management unit is installed.

12. A memory card comprising:

a printed circuit board;

a passive capacitor installed at the printed circuit board;

a non-volatile memory chip installed at the printed circuit board; and

a controller circuit chip installed at the printed circuit board, for receiving an external supply voltage to supply an operating voltage to the non-volatile memory chip, wherein the controller circuit chip performs a boosting operation using the passive capacitor when the external supply voltage is lower than a detection voltage, the boosted voltage being outputted as the operating voltage of the non-volatile memory chip.

13. The memory card of claim 12 , wherein the detection voltage is higher than a minimum operating voltage of an operating range of the non-volatile memory chip and lower than the operating voltage.

14. The memory card of claim 13 , wherein when the external supply voltage is lower than the detection voltage, the controller circuit chip boosts the external supply voltage using the passive capacitor and outputs the boosted voltage as the operating voltage.

15. The memory card of claim 13 , wherein when the external supply voltage is higher than the detection voltage and lower than the operating voltage, the controller circuit chip outputs the external supply voltage as the operating voltage.

16. The memory card of claim 12 , wherein the detection voltage is a minimum operating voltage of an operating range of the non-volatile memory chip.

17. The memory card of claim 16 , wherein when the external supply voltage is lower than the detection voltage, the controller circuit chip boosts the external supply voltage up to the operating voltage using the passive capacitor.

18. The memory card of claim 12 , wherein the control circuit chip includes:

a level detector circuit for detecting whether the external supply voltage is lower than a detection voltage; and

a booster control circuit for boosting the external supply voltage using the passive capacitor when the external supply voltage is lower than the detection voltage.

19. A memory card comprising:

a printed circuit board;

a passive capacitor installed at the printed circuit board; and

an integrated circuit chip installed at the printed circuit board and including a non-volatile memory and a controller circuit chip,

wherein the integrated circuit chip includes:

a level detector circuit for detecting whether the external supply voltage is lower than a detection voltage; and

a booster control circuit for boosting the external supply voltage using the passive capacitor when the external supply voltage is lower than the detection voltage.

20. The memory card of claim 19 , wherein the detection voltage is higher than a minimum operating voltage of an operating range of the non-volatile memory chip and lower than the operating voltage.

21. The memory card of claim 19 , wherein the integrated circuit chip further comprises a regulator that outputs the external supply voltage as the operating voltage when the external supply voltage is higher than the detection voltage and lower than the operating voltage, and regulates the external supply voltage to the operating voltage when the external supply voltage is higher than the operating voltage of the non-volatile memory chip.

22. The memory card of claim 19 , wherein a booster circuit for boosting the external supply voltage comprises the passive capacitor and the booster control circuit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2004
From: CHOI, JIN-HYEOK; BAHNG, SAM-YONG; CHUNG, CHIL-HEE
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 015965/0475 →
Priority Claims (1)
KR 10-2004-0002394 · Jan 13, 2004 · national
Continuity (1)
Related Publication 20050152202A1 · Jul 14, 2005