Pattern formation method and exposure system
View Patent ↗After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by irradiating the resist film with exposing light while supplying, between a projection lens and the resist film, a solution of water (having a refractive index of 1.44) that includes an antifoaming agent and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and the resultant resist film is developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
1. A pattern formation method comprising the steps of:
performing pattern exposure by selectively irradiating a resist film with exposing light while supplying a solution onto said resist film; and
forming a resist pattern by developing said resist film after the pattern exposure,
wherein, in the step of performing pattern exposure, said solution supplied onto said resist film is temporarily stored in a solution storage that is provided between said resist film and a lens used for projecting said exposing light to said resist film and has an inlet for allowing said solution to flow in and an outlet, having a cross-sectional area smaller than said inlet, for allowing said solution to flow out.
2. The pattern formation method of claim 1 , wherein said solution is water.
3. The pattern formation method of claim 1 , wherein said solution is perfluoropolyether.
4. The pattern formation method of claim 1 , wherein said solution includes an antifoaming agent.
5. The pattern formation method of claim 4 , wherein said antifoaming agent is silicone oil, fatty acid, phosphoric ester, vegetable fat, glycerol fatty ester, calcium carbonate, magnesium carbonate, lecithin or polyether.