Group III nitride based semiconductor substrate and process for manufacture thereof
View Patent ↗To provide a semiconductor substrate of a group III nitride with a little warp, this invention provides a process comprising such steps of: epitaxial-growing a GaN layer 33 with a GaN low temperature grown buffer layer 32 upon a sapphire substrate 31; removing the sapphire substrate 31 , the GaN buffer layer 32 and a small portion of the GaN layer 33 from the substrate taken out of a growth reactor to obtain a self-supporting GaN substrate 35 ; and after that, heat-treating the GaN substrate 35 by putting it into an electric furnace under the NH 3 atmosphere at 1200° C. for 24 hours; which leads to a marked reduction of the warp of the self-supporting GaN substrate 35 such that dislocation densities of its obverse and reverse surface are 4×10 7 cm −2 and 8×10 5 cm −2 , and thereby such a low ratio of dislocation densities of 50 is well-controlled.
1. A self-supporting substrate of group III nitride based semiconductor; wherein
the self-supporting substrate is formed by growing a layer of group III nitride based semiconductor on a substrate of a different material and thereafter removing the substrate of the different material; and wherein
the self-supporting substrate has a surface of a front side and a surface of a rear side;
a dislocation density for the surface of the front side and a dislocation density for the surface of the rear side are different from one another; and
on comparison between the dislocation density for the surface of the front side and the dislocation density for the surface of the rear side,
when a lower dislocation density selected from the dislocation density for the surface of the front side or the dislocation density for the surface of the rear side is designated n 1 , and a higher dislocation density selected from the dislocation density for the surface of the front side or the dislocation density for the surface of the rear side is designated n 2 , a ratio of n 2 /n 1 is 250 or less.
2. A self-supporting substrate of group III nitride based semiconductor as claimed in claim 1 , wherein n 1 is not higher than 1×10 8 cm −2 .
3. A self-supporting substrate of group III nitride based semiconductor; wherein
the self-supporting substrate is formed by growing a layer of group III nitride based semiconductor on a substrate of a different material and thereafter removing the substrate of the different material; and wherein
the self-supporting substrate has a surface of a front side and a surface of a rear side;
an edge dislocation density for the surface of the front side and an edge dislocation density for the surface of the rear side are different from one another; and
on comparison between an edge dislocation density for the surface of the front side an edge dislocation density for the surface of the rear side, when a lower edge dislocation density selected from the edge dislocation density for the surface of the front side or the edge dislocation density for the surface of the rear side is designated m 1 and a higher edge dislocation density selected from the edge dislocation density for the surface of the front side or the edge dislocation density for the surface of the rear side is designated m 2 , a ratio of m 2 /m 1 is 250 or less.
4. A self-supporting substrate of group III nitride based semiconductor as claimed in claim 3 , wherein a thickness thereof is not less than 30 μm but not greater than 1 mm.
5. A self-supporting substrate of group III nitride based semiconductor as claimed in claim 3 , wherein it comprises a layer made of GaN or AlGaN.
6. A self-supporting substrate of group III nitride based semiconductor as claimed in claim 3 , wherein m 1 is not higher than 5×10 8 cm −7 .
7. A self-supporting substrate of group III nitride based semiconductor as claimed in claim 1 , wherein a thickness thereof is not less than 30 μm but not greater than 1 mm.
8. A self-supporting substrate of group III nitride based semiconductor as claimed in claim 1 , wherein it comprises a layer made of GaN or AlGaN.
9. A self-supporting substrate of group III nitride based semiconductor claimed in claim 1 ,
wherein a ratio of n 2 /n 1 is in the range of 5≦n 2 /n 1 ≦250.
10. A self-supporting substrate of group III nitride based semiconductor claimed in claim 3 ,
wherein a ratio of m 2 /m 1 is in the range of 6≦m 2 /m 1 ≦250.
11. A self-supporting substrate of group III nitride based semiconductor; wherein
the self-supporting substrate is made from a layer of group III nitride based semiconductor grown by epitaxial growth;
the self-supporting substrate has a surface of a front side and a surface of a rear side;
a dislocation density for the surface of the front side and a dislocation density for the surface of the rear side are different from each other; and
on comparison between the dislocation density for the surface of the front side and the dislocation density for the surface of the rear side,
when a lower dislocation density selected from the dislocation density for the surface of the front side or the dislocation density for the surface of the rear side is designated n 1 and a higher dislocation density selected from the dislocation density for the surface of the front side or the dislocation density for the surface of the rear side is designated n 2 , a ratio of n 2 /n 1 is 250 or less.
12. A self-supporting substrate of group III nitride based semiconductor claimed in claim 11 , wherein n 1 is not higher than 1×10 8 cm −2 .
13. A self-supporting substrate of group III nitride based semiconductor claimed in claim 11 ,
wherein a ratio of n 2 /n 1 is in the range of 5≦n 2 /n 1 ≦250.
14. A self-supporting substrate of group III nitride based semiconductor; wherein
the self-supporting substrate is made from a layer of group III nitride based semiconductor grown by epitaxial growth;
the self-supporting substrate has a surface of a front side and a surface of a rear side;
an edge dislocation density for the surface of the front side and an edge dislocation density for the surface of the rear side are different from each other; and
on comparison between an edge dislocation density for the surface of the front side and an edge dislocation density for the surface of the rear side,
when a lower edge dislocation density selected from the edge dislocation density for the surface of the front side or the edge dislocation density for the surface of the rear side is designated m 1 and a higher edge dislocation density selected from the edge dislocation density for the surface of the front side or the edge dislocation density for the surface of the rear side is designated m 2 , a ratio of m 2 /m 1 is 250 or less.
15. A self-supporting substrate of group III nitride based semiconductor claimed in claim 14 , wherein m 1 is not higher than 5×10 8 cm −7 .
16. A self-supporting substrate of group III nitride based semiconductor claimed in claim 14 ,
wherein a ratio of m 2 /m 1 is in the range of 6≦m 2 /m 1 ≦250 .