Process for producing polyurethane foam
A process for producing a finely cellular polyurethane foam by mixing a first ingredient comprising an isocyanate compound and a second ingredient comprising a compound containing an active hydrogen group, characterized by comprising adding a nonionic silicone surfactant containing no hydroxyl group to at least one of the first ingredient and the second ingredient in an amount of 0.1 to 5 wt %, excluding 5 wt %, based on the total amount of the first ingredient and the second ingredient, subsequently agitating the surfactant containing ingredient together with an unreactive gas, which has no reactivity to isocyanate group or active hydrogen group, to disperse the unreactive gas as fine bubbles to prepare a bubble dispersion and then mixing the bubble dispersion with the remaining ingredient to cure the resultant mixture and forming finely cellular structure into the resultant polyurethane foam by the fine bubbles of the bubble dispersion.
1. A polishing sheet configured to polish a semiconductor wafer and having a thickness of 0.8 mm to 2.0 mm, comprising a cellular polyurethane foam having an average cell diameter of 50 μm or less, a density of about 0.6 to about 0.95 g/cm 3 , and an Asker D hardness of 30 to 60, said foam being formed by preparing a first ingredient comprising an aliphatic isocyanate compound and a second ingredient comprising, as a compound containing an active hydrogen group, methylene bis-o-chloro aniline and/or dicyclohexyl methane-4,4′-diamine; adding a nonionic silicone surfactant containing no hydroxyl group to at least one of said first ingredient or said second ingredient in an amount of not less than 0.1 wt. % but less than 5 wt. %, relative to the total amount of said first ingredient and said second ingredient; agitating the ingredient(s) in which said surfactant has been added, together with an unreactive gas which has no reactivity to an isocyanate group or active hydrogen group, thereby dispersing said unreactive gas as fine bubbles into said ingredient(s) containing said surfactant to produce a bubble dispersion; mixing said bubble dispersion with the remaining ingredient if any; and curing the resultant mixture wherein said first ingredient and said second ingredient react.
2. The polishing sheet according to claim 1 , wherein said foam has an average cell diameter of 10 to 40 μm.
3. The polishing sheet according to claim 1 , wherein said foam has an Asker D hardness of 50 to 56.
4. The polishing sheet according to claim 1 , wherein said sheet has a thickness of about 1.2 mm.
5. The polishing sheet according to claim 1 , wherein said sheet has a groove provided on its surface.
6. The polishing sheet according to claim 5 , wherein said groove has a depth of 0.4 mm to 0.8 mm.
7. The polishing sheet according to claim 1 , which is in contact with a semiconductor wafer.
8. A polishing sheet configured to polish a semiconductor wafer and having a thickness of 0.8 mm to 2.0 mm, comprising a cellular polyurethane foam having an average cell diameter of 50 μm or less, a density of about 0.6 to about 0.95 g/cm 3 , and an Asker D hardness of 30 to 60, said foam comprising a cured mixture of (i) a first ingredient comprising an aliphatic isocyanate compound, (ii) a second ingredient comprising, as a compound containing an active hydrogen group, methylene bis-o-chloro aniline and/or dicyclohexyl methane-4.4′-diamine, (iii) a nonionic silicone surfactant containing no hydroxyl group added to at least one of said first ingredient or said second ingredient in an amount of not less than 0.1 wt. % but less than 5 wt. % relative to the total amount of said first ingredient and said second ingredient, and (iv) an unreactive gas having no reactivity to an isocyanate group or active hydrogen group, dispersed as fine bubbles in mixture containing ingredients (i) through (iii).
9. The polishing sheet according to claim 8 , wherein said foam has an average cell diameter of 10 to 40 μm.
10. The polishing sheet according to claim 9 , wherein said foam has an Asker D hardness of 50 to 56.
11. The polishing sheet according to claim 8 , wherein said sheet has a groove having a depth of 0.4 mm to 0.8 mm provided on its surface.
12. The polishing sheet according to claim 8 , which is in contact with a semiconductor wafer.
13. A method of polishing a semiconductor wafer comprising polishing a semiconductor wafer with the polishing sheet of claim 1 .
14. A method of polishing a semiconductor wafer comprising polishing a semiconductor wafer with the polishing sheet of claim 8 .
15. The polishing sheet according to claim 1 , which comprises no chemically-reactive blowing agent.
16. The polishing sheet according to claim 8 , which comprises no chemically-reactive blowing agent.