Laser diode with a low absorption diode junction
A laser diode that has a pluality of semiconductor epitaxial layers grown on a substrate. The diode includes a light generating layer located between two layers of n-type material. A thin layer of p-type material is interposed between the active layer and an n-type layer. The diode includes a layer of n-doped material located adjacent to a substrate. The laser diode further includes an active layer located between the n-doped layer and a layer of p-doped material. An additional layer of n-doped material is located between the p-doped material and a contact. The contact is biased so as to induce a recombination of holes and electrons in the active region and generate light. The light travels along the active layer, p-doped layer and in both n-doped layers. Having an n-doped layer between the contact and p-doped layer reduces the amount of photon absorption within the laser diode.
1. An edge emitting laser diode, comprising:
a substrate;
a first layer of n-doped cladding material adjacent to said substrate;
an active layer adjacent to said layer of n-doped material;
a first layer of p-doped material adjacent to said active layer;
a second layer of n-doped material adjacent to said first layer of p-doped material, said second layer of n-doped material includes a heavily n-doped tunnel layer and an upper cladding layer; and,
a contact adjacent to said second layer of n-doped material, said contact is biased so that light is generated in said active layer, the light travels along said active layer, said first layer of p-doped material and said heavily n-doped tunnel layer.
2. The laser diode of claim 1 , wherein said first layer of p-doped material includes a lightly p-doped injection layer and heavily p-doped tunnel layer.
3. The laser diode of claim 1 , wherein said contact is n-doped.
4. An edge emitting laser diode, comprising:
a substrate;
a lower cladding layer of n-doped material adjacent to said substrate;
an active layer adjacent to said lower cladding layer of n-doped material;
an injection layer of lightly p-doped material adjacent to said active layer;
a tunnel layer of heavily p-doped material adjacent to said injection layer of lightly p-doped material;
a tunnel layer of heavily n-doped material adjacent to said tunnel layer of heavily p-doped material;
an upper cladding layer of n-doped material adjacent to said tunnel layer of heavily n-doped material; and,
a contact adjacent to said upper cladding layer of n-doped material, said contact is biased so that light is generated in said active layer, the light travels along said active layer, said injection layer and said tunnel layers of heavily n-doped and p-doped material.
5. The laser diode of claim 4 , wherein said contact is n-doped.
6. A method for operating an edge emitting laser diode, comprising:
providing a first layer of n-doped cladding material over a substrate;
providing an active layer over the first layer of n-doped material;
providing a first layer of p-doped material over the active layer;
providing a second layer of n-doped material over the first layer of p-doped material, the second layer including a heavily n-doped tunnel layer and an upper cladding layer;
providing a contact over the second layer of n-doped material; and,
biasing the contact to generate light in the active layer, the light travels along the active layer, the first layer of p-doped material and the heavily n-doped tunnel layer.
7. A method for operating an edge emitting laser diode, comprising:
providing a lower cladding layer of n-doped material over a substrate;
providing an active layer over the lower cladding layer of n-doped material;
providing an injection layer of lightly p-doped material over the active layer;
providing a tunnel layer of heavily p-doped material over the injection layer of lightly p-doped material;
providing a tunnel layer of heavily n-doped material over the tunnel layer of heavily p-doped material;
providing an upper cladding layer of n-doped material over the tunnel layer of n-doped material;
providing a contact over the upper cladding layer of n-doped material; and,
biasing the contact to generate light in the active layer, the light travels along the active layer, the injection layer and the tunnel layers of heavily n-doped and p-doped materials.