Distributed feedback semiconductor laser
A tuning layer is disposed spaced by some distance apart from an active layer in a thickness direction, the tuning layer having a transition wavelength shorter than a wavelength of light radiated from the active layer. A diffraction grating layer is disposed between the active layer and tuning layer, a refractive index of the diffraction grating layer being periodically changed along an optical resonator direction. A first electrode supplies the active layer with current. A second electrode supplies the tuning layer with current independently from the current to be supplied to the active layer. A TTG-DFB laser is provided which can maintain a proper coupling coefficient and has characteristics suitable for application to communication light sources.
1. A semiconductor laser comprising:
an active layer for radiating light through stimulated emission by carrier injection;
a tuning layer disposed spaced by some distance apart from the active layer in a thickness direction, the tuning layer having a transition wavelength shorter than a wavelength of the light radiated from the active layer;
an intermediate layer formed on said tuning layer;
a diffraction grating layer disposed between the active layer and the intermediate layer, a refractive index of the diffraction grating layer being periodically changed along an optical resonator direction;
a first electrode for supplying the active layer with current; and
a second electrode for supplying the tuning layer with current independently from the current to be supplied to the active layer.
2. The semiconductor laser according to claim 1 , further comprising a pair of clad layers, between which the active layer, the diffraction grating layer and the tuning layer are interposed.
3. The semiconductor laser according to claim 1 , wherein the active layer has a multiple quantum well structure alternately stacking quantum well layers and barrier layers.
4. The semiconductor laser according to claim 2 , wherein the active layer has a multiple quantum well structure alternately stacking quantum well layers and barrier layers.
5. The semiconductor laser according to claim 1 , wherein the tuning layer has a multiple quantum well structure alternately stacking quantum well layers and barrier layers.
6. The semiconductor laser according to claim 2 , wherein the tuning layer has a multiple quantum well structure alternately stacking quantum well layers and barrier layers.
7. The semiconductor laser according to claim 1 , wherein the diffraction grating layer comprises:
a diffraction grating having a periodical structure along the optical resonator direction; and
a burying layer burying the diffraction grating and having a refractive index different from the refractive index of the diffraction grating.
8. The semiconductor laser according to claim 2 , wherein the diffraction grating layer comprises:
a diffraction grating having a periodical structure along the optical resonator direction; and
a burying layer burying the diffraction grating and having a refractive index different from the refractive index of the diffraction grating.
9. The semiconductor laser according to claim 7 , further comprising an intermediate layer disposed between the tuning layer and the diffraction grating layer, wherein the intermediate layer, the diffraction grating layer and the burying layer have a same conductivity type.
10. The semiconductor laser according to claim 8 , further comprising an intermediate layer disposed between the tuning layer and the diffraction grating layer, wherein the intermediate layer, the diffraction grating layer and the burying layer have a same conductivity type.
11. The semiconductor laser according to claim 1 , further comprising an intermediate layer disposed between the tuning layer and the diffraction grating layer, wherein the intermediate layer, the diffraction grating layer and the burying layer have a same conductivity type.