Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
View Patent ↗An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes first features therein. Second features are then formed in the first epitaxial layer. The second features include at least one sidewall that is oriented nonparallel to the crystallographic direction. A second epitaxial silicon carbide layer is then grown on the surface of the first epitaxial silicon carbide layer that includes the second features therein.
1. A silicon carbide semiconductor structure comprising:
a silicon carbide substrate having an off-axis orientation toward a predetermined crystallographic direction and including a plurality of first features in a surface thereof, the plurality of first features including at least one first sidewall that is oriented nonparallel to the predetermined crystallographic direction;
a first epitaxial silicon carbide layer on the surface of the silicon carbide substrate that includes the plurality of first features therein, the first epitaxial silicon carbide layer being thicker than a depth of the at least one first sidewall and including a plurality of second features in a surface thereof that is remote from the silicon carbide substrate, the plurality of second features including at least one second sidewall that is oriented nonparallel to the predetermined crystallographic direction; and
a second epitaxial silicon carbide layer on the surface of the first epitaxial silicon carbide layer that includes the plurality of second features therein and that is thicker than a depth of the at least one second sidewall.
2. A structure according to claim 1 wherein the predetermined crystallographic direction is a <11{overscore (2)}0> direction.
3. A structure according to claim 1 wherein the plurality of first features comprises a plurality of trenches extending oblique and/or perpendicular to the predetermined crystallographic direction and including at least one first sidewall that is oriented nonparallel to the predetermined crystallographic direction.
4. A structure according to claim 1 wherein the plurality of first features comprises a plurality of depressions including at least one first sidewall that is oriented nonparallel to the predetermined crystallographic direction.
5. A structure according to claim 4 wherein the plurality of depressions comprises a periodically repeating pattern of hexagonal pits.
6. A structure according to claim 1 wherein the plurality of second features comprises a plurality of trenches in the surface of the first epitaxial layer, the plurality of trenches extending oblique and/or perpendicular to the predetermined crystallographic direction and including at least one second sidewall that is oriented nonparallel to the predetermined crystallographic direction.
7. A structure according to claim 1 wherein the plurality of second features comprises a plurality of depressions in the surface of the first epitaxial layer, the plurality of depressions including at least one second sidewall that is oriented nonparallel to the predetermined crystallographic direction.
8. A structure according to claim 7 wherein the plurality of depressions comprises a periodically repeating pattern of hexagonal pits.
9. A structure according to claim 1 wherein the first epitaxial silicon carbide layer contains lower basal plane dislocation density than the silicon carbide substrate.
10. A structure according to claim 1 wherein the first epitaxial silicon carbide layer contains lower basal plane dislocation density than the silicon carbide substrate and wherein the second epitaxial silicon carbide layer contains lower basal plane dislocation density than the first epitaxial silicon carbide layer.
11. A structure according to claim 1 wherein the first and second features are laterally offset from one another.
12. A structure according to claim 1 further comprising:
a semiconductor device on the second epitaxial silicon carbide layer.
13. A semiconductor structure comprising:
a monocrystalline substrate having an off-axis orientation toward a predetermined crystallographic direction and including a plurality of first features in a surface thereof, the plurality of first features including at least one first sidewall that is oriented nonparallel to the predetermined crystallographic direction;
a first epitaxial layer on the surface of the monocrystalline substrate that includes the plurality of first features therein;
the first epitaxial layer being thicker than a depth of the at least one first sidewall and including a plurality of second features in a surface thereof that is remote from the monocrystalline substrate, the plurality of second features including at least one second sidewall that is oriented nonparallel to the predetermined crystallographic direction; and
a second epitaxial layer on the surface of the first epitaxial layer that includes the plurality of second features therein and that is thicker than a depth of the at least one second sidewall.
14. A structure according to claim 13 wherein the first epitaxial layer contains lower basal plane dislocation density than the monocrystalline substrate.
15. A structure according to claim 13 wherein the first epitaxial layer contains lower basal plane dislocation density than the monocrystalline substrate and wherein the second epitaxial layer contains lower basal plane dislocation density than the first epitaxial layer.
16. A structure according to claim 13 wherein the monocrystalline substrate comprises silicon carbide.
17. A structure according to claim 13 wherein the first and second features are laterally offset from one another.