IP Library Granted Patent US 7,112,472
Granted Patent B2
US 7,112,472 · App. 10/607,525 · Granted Sep 26, 2006

Methods of fabricating a composite carbon nanotube thermal interface device

Assignee: Intel Corporation
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Quick Facts
Patent No.
US 7,112,472
App. No.
10/607,525
Granted
Sep 26, 2006
Kind
B2
Abstract

Embodiments of a composite carbon nanotube structure comprising a number of carbon nanotubes disposed in a matrix comprised of a metal or a metal oxide. The composite carbon nanotube structures may be used as a thermal interface device in a packaged integrated circuit device.

Claims (35)

1. A method comprising:

forming a sacrificial layer on a substrate;

forming a metal layer on the sacrificial layer;

anodizing the metal layer to form a layer of a porous metal oxide;

forming carbon nanotubes in pores of the porous metal oxide layer; and

separating the porous metal oxide layer and carbon nanotubes from the sacrificial layer and the substrate to form a free-standing composite carbon nanotube (CNT) structure.

2. The method of claim 1 , further comprising removing excess metal oxide material from the pores of the porous metal oxide layer prior to forming the carbon nanotubes.

3. The method of claim 2 , wherein the pores extend through the porous metal oxide layer into the sacrificial layer.

4. The method of claim 1 , further comprising depositing a catalyst in the pores of the porous metal oxide layer prior to forming the carbon nanotubes.

5. The method of claim 4 , wherein the catalyst comprises iron, nickel, cobalt, rhodium, platinum, or yttrium.

6. The method of claim 1 , wherein separating the porous metal oxide layer and carbon nanotubes from the sacrificial layer and substrate comprises dissolving the sacrificial layer.

7. The method of claim 6 , wherein the sacrificial layer is dissolved in a solution including an acid.

8. The method of claim 7 , wherein the acid comprises phosphoric acid, succinic acid, or sulfuric acid.

9. The method of claim 7 , wherein the sacrificial layer is dissolved under application of an anodic potential.

10. The method of claim 1 , further comprising attaching the composite CNT structure to a component.

11. The method of claim 10 , wherein the component comprises a semiconductor wafer, an integrated circuit die, a heat spreader, or a heat sink.

12. The method of claim 10 , wherein attaching the composite CNT structure to the component comprises attaching the composite CNT structure to the component using a low melting point metal alloy.

13. The method of claim 12 , wherein the low melting point metal alloy comprises a solder.

14. The method of claim 10 , wherein attaching the composite CNT structure to the component comprises compressing the composite CNT structure against the component.

15. The method of claim 14 , wherein the composite CNT structure is compressed against the component under a pressure in a range up to approximately 10 Kg/cm 2 .

16. The method of claim 1 , wherein the composite CNT structure has a thickness in a range of approximately 2 μm to 20 μm.

17. The method of claim 1 , wherein the carbon nanotubes are formed to a height extending above an upper surface of the porous metal oxide layer.

18. The method of claim 1 , wherein the carbon nanotubes are formed by chemical vapor deposition (CVD) or plasma enhanced CVD.

19. The method of claim 1 , wherein the metal layer comprises aluminum and the porous metal oxide layer comprises aluminum oxide.

20. The method of claim 1 , wherein the sacrificial layer comprises vanadium, titanium, or tungsten.

21. The method of claim 1 , wherein the metal layer is anodized under a positive voltage and in the presence of a solution including an acid.

22. The method of claim 21 , wherein the acid comprises one of phosphoric acid, succinic acid, sulfuric acid, and oxalic acid.

23. The method of claim 21 , wherein the positive voltage comprises a voltage in a range of approximately 1 to 60 volts.

24. A method comprising:

forming a sacrificial layer on a substrate;

forming a layer of a porous material on the sacrificial layer;

forming carbon nanotubes in pores of the layer of porous material; and

separating the porous material layer and carbon nanotubes from the sacrificial layer and the substrate to form a free-standing composite carbon nanotube structure.

25. The method of claim 24 , further comprising depositing a catalyst in the pores of the layer of porous material prior to forming the carbon nanotubes.

26. The method of claim 24 , wherein separating the porous material layer and carbon nanotubes from the sacrificial layer and the substrate comprises dissolving the sacrificial layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 17, 2003
From: DUBIN, VALERY M.
To: INTEL CORPORATION
Reel/Frame 014697/0552 →
Continuity (1)
Related Publication 20040265489A1 · Dec 30, 2004