Extremal voltage detector with high input impedance
An extremal voltage detector produces an output voltage from an operational amplifier having its non-inverting input terminal connected to a first node and its inverting input terminal connected to a second node. A number of identical metal-oxide-semiconductor field-effect transistors (MOSFETs) controlled by respective input voltages are connected in parallel between the first node and a first power supply terminal. Another identical MOSFET, controlled by the output voltage, is connected between the second node and the first power supply terminal. Alternatively, a plurality of identical MOSFET detection circuits, controlled by the input and output voltages, are connected in parallel between the first power supply node and the first and second nodes. A pair of constant-current circuits conduct equal currents from the first and second nodes to a second power-supply terminal.
1. An extremal voltage detector for receiving a plurality of input voltages and producing an output voltage equal to an extremal one of the input voltages, comprising:
a first power supply terminal supplying a first potential;
a second power supply terminal supplying a second potential different from the first potential;
a first node;
a second node;
a plurality of first metal-oxide-semiconductor field-effect transistors (MOSFETs) connected in parallel between the first power supply terminal and the first node, the first MOSFETs having identical electrical characteristics, each first MOSFET having a gate, receiving one of the input voltages at said gate, and conducting current responsive to the received input voltage;
a second MOSFET having the same electrical characteristics as the first MOSFETs, connected between the first power supply terminal and the second node, the second MOSFET having a gate, receiving the output voltage at said gate, and conducting current responsive to the output voltage;
a first constant-current circuit conducting a first constant current between the first node and the second power supply terminal;
a second constant-current circuit conducting a second constant current, equal to the first constant current, between the second node and the second power supply terminal; and
an operational amplifier having a non-inverting input terminal connected to the first node, an inverting input terminal connected to the second node, and an output terminal at which the output voltage is produced.
2. The extremal voltage detector of claim 1 , wherein the first potential is higher than the second potential, and the first MOSFETs and the second MOSFET are n-channel transistors, the output voltage being equal to a maximum one of the input voltages.
3. The extremal voltage detector of claim 2 , wherein the second potential is a ground potential.
4. The extremal voltage detector of claim 1 , wherein the first potential is lower than the second potential, and the first MOSFETs and the second MOSFET are p-channel transistors, the output voltage being equal to a minimum one of the input voltages.
5. The extremal voltage detector of claim 4 , wherein the first potential is a ground potential.
6. An extremal voltage detector for receiving a plurality of input voltages and producing an output voltage equal to an extremal one of the input voltages, comprising:
a first power supply terminal supplying a first potential;
a second power supply terminal supplying a second potential different from the first potential;
a first node;
a second node;
a plurality of detection circuits having mutually identical circuit configurations and mutually identical electrical characteristics, each detection circuit receiving the output voltage and one of the input voltages, conducting current between the first power supply terminal and the first node, and conducting current between the first power supply terminal and the second node;
a first constant-current circuit conducting a first constant current between the first node and the second power supply terminal;
a second constant-current circuit conducting a second constant current, equal to the first constant current, between the second node and the second power supply terminal; and
an operational amplifier having a non-inverting input terminal connected to the first node, an inverting input terminal connected to the second node, and an output terminal at which the output voltage is produced;
wherein each one of the plurality of detection circuits includes:
a first internal node;
a second internal node;
a first metal-oxide-semiconductor field-effect transistor (MOSFET) of a first channel type having a source connected to the first node, a gate receiving said one of the input voltages, and a drain connected to the first internal node;
a second MOSFET of a second channel type having a source connected to the first power supply terminal, a gate connected to the first internal node, and a drain connected to the first internal node;
a third MOSFET of the second channel type having a source connected to the first power supply terminal, a gate connected to the first internal node, and a drain connected to the second internal node, conducting current mirroring the current conducted by the second MOSFET; and
a fourth MOSFET of the first channel type having a source connected to the second node, a gate receiving the output voltage, and a drain connected to the second internal node.
7. The extremal voltage detector of claim 6 , wherein the first potential is higher than the second potential, the first and fourth MOSFETs are n-channel transistors, and the second and third MOSFETs are p-channel transistors, the output voltage being equal to a maximum one of the input voltages.
8. The extremal voltage detector of claim 7 , wherein the second potential is a ground potential.
9. The extremal voltage detector of claim 6 , wherein the first potential is lower than the second potential, the first and fourth MOSFETs are p-channel transistors, and the second and third MOSFETs are n-channel transistors, the output voltage being equal to a minimum one of the input voltages.
10. The extremal voltage detector of claim 9 , wherein the first potential is a ground potential.