Circuit substrate and method for fabricating the same
A circuit substrate including a silicon substrate with through-holes formed therein, conducting films formed on the inside walls of the through-holes, and an organic resin film formed on the surface of at least one side of the silicon substrate and covering at least parts of the through-holes. Accordingly, even in a case where the through-holes formed, micronized at a small pitch, the substrate does not lower the mechanical strength. Thus, a circuit substrate which is applicable to high-density packaging can be provided.
1. A circuit substrate comprising:
a substrate having a first through-hole formed therein;
a reinforcing film of an organic resin formed only on the surface of at least one side of the substrate, covering the opening of the first through-hole and exposed to the cavity inside the first through-hole, the reinforcing film having a second through-hole formed therein with a diameter wider than the first through-hole and a third through-hole formed in a part of the reinforcing film which covers the opening of the first through-hole;
an element formed on the underside of the substrate; and
a conducting film formed continuously on the inside wall of the first through-hole and on the surface of the substrate below the reinforcing film, and exposed in the cavity inside the first through-hole and in the bottom of the second through-hole, for electrically connecting the element from the first through-hole to the second through hole.
2. A circuit substrate according to claim 1 , further comprising an interconnection layer formed between the substrate and the reinforcing film and electrically connected to the conducting film.
3. A circuit substrate according to claim 2 , wherein the conducting film is electrically connected to the outside via the interconnection layer.
4. A circuit substrate according to claim 2 , further comprising another conducting film formed on the surface of the other side of the substrate and electrically connected to the conducting film.
5. A circuit substrate according to claim 4 , wherein the through-hole is covered by said another conducting film.
6. A circuit substrate according to claim 1 , further comprising another conducting film formed on the surface of the other side of the substrate and electrically connected to the conducting film.
7. A circuit substrate according to claim 6 , wherein the through-hole is covered by said another conducting film.
8. A circuit substrate according to claim 6 , wherein said another conducting film is one of the electrodes of a capacitor.
9. A method for fabricating a circuit substrate comprising the steps of:
forming a first through-hole in a substrate;
forming a conducting film on the inside wall of the through-hole, exposed in the cavity inside the through-hole;
forming a reinforcing film of an organic resin on the surface of at least one side of the substrate, covering the opening of the through-hole and forming a second through-hole in the reinforcing film having a diameter wider than that of the first through-hole and forming a third through-hole in a part of the reinforcing film which covers the opening of the first through-hole.
10. A method for fabricating a circuit substrate according to claim 9 ,
further comprising, prior to the step of forming the through-hole, the step of forming on said surface of one side of the substrate a film whose etching characteristics are different from the substrate,
wherein in the step of forming the through-hole, the substrate is etched from the surface of the other side of the substrate to form the through-hole.
11. A method for fabricating a circuit substrate according to claim 10 , wherein in the step of forming the conducting film, the conducting film is formed on the inside wall of the through-hole by plating.
12. A method for fabricating a circuit substrate according to claim 9 , wherein in the step of forming the through-hole, the through-hole is formed in the substrate by sandblasting.
13. A method for fabricating a circuit substrate according to claim 9 , wherein in the step of forming the conducting film, the conducting film is formed on the inside wall of the through-hole by plating.
14. A method for fabricating a circuit substrate according to claim 13 ,
further comprising, prior to the step of forming the conducting film, the step of applying and drying a liquid containing metal micronized particles to affix the metal micronized particles to the inside wall of the through-hole.
15. A method for fabricating a circuit substrate according to claim 9 , wherein in the step of forming the reinforcing film, an organic resin having a viscosity of above 20000 mPa·s is applied to the substrate to form the reinforcing film of the organic resin.
16. A method for fabricating a circuit substrate according to claim 9 , wherein in the step of forming the reinforcing film, a film is affixed to the substrate to form the reinforcing film of the film.
17. A method for fabricating a circuit substrate according to claim 9 ,
further comprising, posterior to the step of forming the reinforcing film, the step of forming an opening in the reinforcing film down to the through-hole.
18. A circuit substrate comprising:
a substrate having a first through-hole formed therein;
a reinforcing film of an organic resin formed on the surface of at least one side of the substrate and covering the opening of the first through-hole, the cavity inside the first through-hole not being filled with the reinforcing film, the reinforcing film having a second through-hole formed therein with a diameter wider than the first through-hole and a third through-hole formed in a part of the reinforcing film which covers the opening of the first through-hole;
an element formed on the underside of the substrate; and
a conducting film formed continuously on the inside wall of the first through-hole and on the surface of the substrate below the reinforcing film, and exposed in the cavity inside the first through-hole and in the bottom of the second through-hole, for electrically connecting the element from the first through-hole to the second through-hole.