IP Library › Granted Patent US 7,163,444
Granted Patent B2
US 7,163,444 · App. 10/744,761 · Granted Jan 16, 2007

Pad constructions for chemical mechanical planarization applications

Assignee: 3M Innovative Properties Company
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Quick Facts
Patent No.
US 7,163,444
App. No.
10/744,761
Granted
Jan 16, 2007
Kind
B2
Abstract

The present invention is directed to an abrasive article comprising a fixed abrasive layer and a subpad. The fixed abrasive element is co-extensive with the subpad. The subpad comprises a resilient element. The resilient element has a Shore A hardness of no greater than 60 as measured using ASTM-2240.

Claims (65)

1. An abrasive article comprising

a fixed abrasive element comprising a fixed abrasive layer, said fixed abrasive layer comprising a plurality of precisely shaped abrasive composites; and

a subpad comprising a resilient element,

wherein the fixed abrasive element is co-extensive with the subpad and the resilient element has a Shore A hardness of no greater than 60 as measured using ASTM-2240, and wherein the Young's modulus of the fixed abrasive layer is less than about 300 MP.

2. The abrasive article of claim 1 , wherein the subpad comprises a rigid element between the fixed abrasive layer and the resilient element.

3. The abrasive article of claim 1 , further comprising a backing between the fixed abrasive layer and the resilient element.

4. The abrasive article of claim 1 , further comprising a pressure sensitive adhesive layer between the abrasive layer and the subpad.

5. The abrasive article of claim 2 further comprising a pressure sensitive adhesive layer between the rigid element and the resilient element.

6. The abrasive article of claim 1 wherein the Young's modulus of the fixed abrasive layer is less than about 75 MPa.

7. The abrasive article of claim 1 wherein the Young's modulus of the fixed abrasive layer is less than about 35 MPa.

8. A method of polishing a semiconductor wafer comprising

providing an abrasive article of claim 1 ;

contacting the abrasive article to a surface of the wafer; and

relatively moving the abrasive article and the surface.

9. The method of claim 8 wherein the wafer comprises a material having a dielectric constant less than 3.5.

10. An abrasive article comprising

a fixed abrasive element; and

a subpad comprising a resilient element,

wherein the fixed abrasive element is co-extensive with the subpad and the resilient element has a Shore A hardness of no greater than 20 as measured using ASTM-2240.

11. The abrasive article of claim 10 wherein the resilient element has a Shore A hardness of no greater than 10 as measured using ASTM-2240.

12. The abrasive article of claim 10 wherein the resilient element has a Shore A hardness of no greater than 4 as measured using ASTM-2240.

13. The abrasive article of claim 10 , wherein the subpad comprises a rigid element between the fixed abrasive element and the resilient element.

14. The abrasive article of claim 10 , wherein the fixed abrasive element comprises a fixed abrasive layer and a backing, wherein the backing is between the fixed abrasive layer and the resilient element.

15. The abrasive article of claim 10 , further comprising a pressure sensitive adhesive layer between the abrasive element and the subpad.

16. The abrasive article of claim 13 further comprising a pressure sensitive adhesive layer between the rigid element and the resilient element.

17. The abrasive article of claim 10 wherein the fixed abrasive element comprises a fixed abrasive layer and the Young's modulus of the fixed abrasive layer is less than about 300 MPa.

18. The abrasive article of claim 10 wherein the fixed abrasive element comprises a fixed abrasive layer and the Young's modulus of the fixed abrasive layer is less than about 75 MPa.

19. The abrasive article of claim 10 wherein the fixed abrasive element comprises a fixed abrasive layer and the Young's modulus of the fixed abrasive layer is less than about 35 MPa.

20. A method of polishing a semiconductor wafer comprising

providing an abrasive article of claim 10 ;

contacting the abrasive article to a surface of the wafer; and

relatively moving the abrasive article and the surface.

21. The method of claim 20 wherein the wafer comprises a material having a dielectric constant less than 3.5.

22. An abrasive article comprising

a fixed abrasive element comprising a fixed abrasive layer, said fixed abrasive layer comprising a plurality of precisely shaped abrasive composites; and

a subpad comprising a resilient element,

wherein the fixed abrasive element is co-extensive with the subpad and the resilient element has a Shore A hardness of greater than 1 as measured using ASTM-2240, and wherein the Young's modulus of the fixed abrasive layer is less than about 300 MPa.

23. The abrasive article of claim 22 wherein the resilient element has a Shore A hardness of greater than 2 as measured using ASTM-2240.

24. The abrasive article of claim 22 , wherein the subpad comprises a rigid element between the fixed abrasive layer and the resilient element.

25. The abrasive article of claim 22 , further comprising a backing between the fixed abrasive layer and the resilient element.

26. The abrasive article of claim 22 , further comprising a pressure sensitive adhesive layer between the abrasive layer and the subpad.

27. The abrasive article of claim 24 further comprising a pressure sensitive adhesive layer between the rigid element and the resilient element.

28. The abrasive article of claim 22 wherein the Young's modulus of the fixed abrasive layer is less than about 75 MPa.

29. The abrasive article of claim 22 wherein the Young's modulus of the fixed abrasive layer is less than about 35 MPa.

30. A method of polishing a semiconductor wafer comprising

providing an abrasive article of claim 22 ;

contacting the abrasive article to a surface of the wafer; and relatively moving the abrasive article and the surface.

31. The method of claim 30 wherein the wafer comprises a material having a dielectric constant less than 3.5.

32. An abrasive article comprising

a fixed abrasive element comprising a fixed abrasive layer, and

a subpad comprising a resilient element,

wherein the fixed abrasive element is co-extensive with the subpad, the Young's modulus of the fixed abrasive layer is less than about 75 MPa, and the resilient element has a Shore A hardness of no greater than 60 as measured using ASTM-2240.

33. The abrasive article of claim 32 , wherein the subpad comprises a rigid element between the fixed abrasive element and the resilient element.

34. The abrasive article of claim 32 , further comprising a backing between the fixed abrasive layer and the resilient element.

35. The abrasive article of claim 32 , further comprising a pressure sensitive adhesive layer between the abrasive element and the subpad.

36. The abrasive article of claim 32 wherein the Young's modulus of the fixed abrasive layer is less than about 35 MPa.

37. An abrasive article comprising

a fixed abrasive element, and

a subpad comprising a resilient element,

wherein the fixed abrasive element is co-extensive with the subpad, the resilient element is at least 0.5 millimeter thick, the resilient element has a Shore A hardness of no greater than 60 as measured using ASTM-2240, and the fixed abrasive element comprises a fixed abrasive layer and the Young's modulus of the fixed abrasive layer is less than about 300 MPa.

38. The abrasive article of claim 37 , wherein the subpad comprises a rigid element between the fixed abrasive element and the resilient element.

39. The abrasive article of claim 37 , further comprising a backing between the fixed abrasive layer and the resilient element.

40. The abrasive article of claim 37 , further comprising a pressure sensitive adhesive layer between the abrasive element and the subpad.

41. The abrasive article of claim 37 wherein the fixed abrasive element comprises a fixed abrasive layer and the Young's modulus of the fixed abrasive layer is less than about 75 MPa.

42. The abrasive article of claim 37 wherein the fixed abrasive element comprises a fixed abrasive layer and the Young's modulus of the fixed abrasive layer is less than about 35 MPa.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2003
From: KOLLODGE, JEFFREY S.; LOESCH, CHRISTOPHER N.
To: 3M INNOVATIVE PROPERTIES COMPANY
Reel/Frame 014853/0820 →
Continuity (2)
Provisional Application 6043931400 · Jan 10, 2003
Related Publication 20040137831A1 · Jul 15, 2004