Zinc oxide crystal growth substrate
View Patent ↗A zinc oxide crystal growth substrate is disclosed. The zinc oxide crystal growth substrate includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate surface by a chemical deposition process. The chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes. The self supporting substrate may be amorphous, polycrystalline, or crystalline. The thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide. The compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.
1. A single crystal zinc oxide substrate comprising:
an amorphous self supporting fused silica (SiO 2 ) substrate surface; and
a thin layer of single crystal zinc oxide deposited on the substrate surface by a chemical deposition process, wherein the thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide.
2. A single crystal zinc oxide substrate according to claim 1 , wherein the single crystal zinc oxide is oriented in the (002) plane.
3. A single crystal zinc oxide substrate according to claim 1 , wherein the compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.
4. A single crystal zinc oxide substrate according to claim 1 , wherein the compatible crystal comprises GaN.
5. A single crystal zinc oxide substrate according to claim 1 , wherein the compatible crystal comprises epitaxial GaN.
6. A single crystal zinc oxide substrate according to claim 1 , wherein the compatible crystal is selected from AlN, SiC, and GaN.
7. A single crystal zinc oxide substrate according to claim 1 , wherein the compatible crystal comprises p-type or n-type ZnO.
8. A single crystal zinc oxide substrate according to claim 1 , wherein the chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes.
9. A single crystal zinc oxide substrate according to claim 1 , wherein the thin layer of zinc oxide has a thickness less than about 5 μm.
10. A single crystal zinc oxide substrate according to claim 1 , wherein the thin layer of zinc oxide has a thickness greater than about 5 μm.
11. A single crystal zinc oxide substrate according to claim 1 , wherein the chemical deposition process comprises RF sputtering using an RF sputtering system comprising a zinc metal target, a substrate surface, and a plasma comprising oxygen and an inert sputtering gas, wherein the RF sputtering system is operated at conditions which produce the thin layer of single crystal zinc oxide on the substrate surface.
12. A single crystal zinc oxide substrate according to claim 11 , wherein the inert sputtering gas is selected from argon, krypton, xenon, neon, and helium.
13. A single crystal zinc oxide substrate according to claim 11 , wherein the sputtering system was operated at a power in the range from about 20 watts to 150 watts.
14. A single crystal zinc oxide substrate according to claim 11 , wherein the sputtering system was operated at a power in the range from 90 watts to 100 watts.
15. A single crystal zinc oxide substrate according to claim 11 , wherein the sputtering system was operated at a RF frequency ranging of about 13.56 MHz.
16. A single crystal zinc oxide substrate according to claim 11 , wherein the sputtering system was operated at a temperature in the range from about 300° C. to about 550° C.
17. A single crystal zinc oxide substrate according to claim 11 , wherein the sputtering system was operated at a temperature in the range from about 350° C. to about 450° C.
18. A single crystal zinc oxide substrate according to claim 11 , wherein the sputtering system was operated for a period from about 1 to about 40 minutes.
19. A single crystal zinc oxide substrate according to claim 11 , wherein the sputtering system was operated for a period from about 1 to about 10 minutes.
20. A single crystal zinc oxide substrate according to claim 1 , wherein the thin layer of single crystal zinc oxide comprises p-type zinc oxide.
21. A single crystal zinc oxide substrate comprising:
an amorphous self supporting substrate surface;
a thin layer of single crystal p-type zinc oxide deposited on the substrate surface by a chemical deposition process, wherein the thin layer of p-type zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide; and
a thin layer of single crystal n-type zinc oxide deposited on the p-type zinc oxide.
22. A single crystal zinc oxide substrate according to claim 21 , wherein the n-type zinc oxide contains an n-type dopant selected from ions of Al, Ga, B, H, Yb and other rare earth elements, Y, Sc, and mixtures thereof.
23. A single crystal zinc oxide substrate according to claim 1 , wherein the thin layer of single crystal zinc oxide comprises n-type zinc oxide.
24. A single crystal zinc oxide substrate comprising:
A polycrystalline self supporting alumina substrate surface; and
a thin layer of single crystal zinc oxide deposited on the substrate surface by a chemical deposition process, wherein the thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide.
25. A single crystal zinc oxide substrate according to claim 24 , wherein the single crystal zinc oxide is oriented in the (002) plane.
26. A single crystal zinc oxide substrate according to claim 24 , wherein the compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.
27. A single crystal zinc oxide substrate according to claim 24 , wherein the compatible crystal comprises GaN.
28. A single crystal zinc oxide substrate according to claim 24 , wherein the compatible crystal comprises epitaxial GaN.
29. A single crystal zinc oxide substrate according to claim 24 , wherein the compatible crystal is selected from AlN, SiC, and GaN.
30. A single crystal zinc oxide substrate according to claim 24 , wherein the compatible crystal comprises p-type or n-type ZnO.
31. A single crystal zinc oxide substrate according to claim 24 , wherein the chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes.
32. A single crystal zinc oxide substrate according to claim 24 , wherein the thin layer of zinc oxide has a thickness less than about 5 μm.
33. A single crystal zinc oxide substrate according to claim 24 , wherein the thin layer of zinc oxide has a thickness greater than about 5 μm.